Datasheet
www.irf.com 11/19/04
IRGS14C40LPbF
IRGSL14C40LPbF
IRGB14C40LPbF
Ignition IGBT
Page 2
Off-State Electrical Charasteristics @ T
J
 = 25°C 
(unless otherwise specified)
Parameter Min Typ Max Unit Conditions Fi
g
BV
CES
Collector-to-Emitter Breakdown Voltage 370 400 430 V
R 
G 
= 1K ohm, I 
C
=7A, V
GE
 = 0V
BV
GES
Gate-to-Emitter Breakdown Voltage 10 12 V
I 
G
=2m A
I 
CES
Collector-to-Emitter Leakage Current 15
µA
R 
G
=1K ohm, V
CE
 = 250V
100
µA
R 
G
=1K ohm, V
CE
 = 250V, T
J
 =150°C 
BV
CER
Emitter-to-Collector Breakdown Voltage
24
28
V
I 
C
 = -10m A
R 
1
Gate Series Resistance
75
ohm
R 
2
Gate-to-Emitter Resistance 10 20 30 K ohm
On-State Electrical Charasteristics @ T
J
 = 25°C 
(unless otherwise specified)
Parameter Min Typ Max Unit Conditions Fi
g
1.2 1.40
I 
C
 = 7A, V
GE
 = 4.5V
V
CE(on)
Collector-to-Emitter Saturation 
1.35
1.55
V
I 
C
 = 10A, V
GE
 = 4.5V
1
 Voltage
1.35
1.55
I 
C
 = 10A, V
GE
 = 4.5V, T
C
= -40
o
C 
2
1.5 1.7
I 
C
 = 14A, V
GE
 = 5.0V, T
C
= -40
o
C
4
1.55 1.75
I 
C
 = 14A, V
GE
 = 5.0V
1.6 1.8
I 
C
 = 14A, V
GE
 = 5.0V, T
C
=150
o
C 
V
GE(th)
Gate Threshold Voltage
1.3
1.8
2.2
V
V
CE
 = V
GE
, I 
C
 = 1 m A, T
C
=25
o
C
3, 5
0.75 1.8
V
CE
 = V
GE
, I 
C
 = 1 m A, T
C
=150
o
C
8
g
fs
Transconductance 10 15 19 S
V
CE
 = 25V, I 
C
 = 10A, T
C
=25
o
C
I 
C
Collector Current
20
A
V
CE
 = 10V, V
GE
 = 4.5V
Switching Characteristics @ T
J
 = 25°C 
(unless otherwise specified)
Parameter Min Typ Max Unit Conditions Fi
g
Q 
g
Total Gate charge
27
I 
C
 = 10A, V
CE
=12V, V
GE
=5V
7
Q 
ge
Gate - Emitter Charge 
2.5
nC
I 
C
 = 10A, V
CE
=12V, V
GE
=5V
15
Q 
gc
Gate - Collector Charge  10
I 
C
 = 10A, V
CE
=12V, V
GE
=5V
t 
d
(on)
Turn - on delay time 0.6 0.9 1.35
V
GE
=5V, R
G
=1K ohm,
 L=1mH, V
CE
=14V
12
t 
r
Rise time 1.6 2.8 4
µs
V
GE
=5V, R
G
=1K ohm,
 L=1mH, V
CE
=14V
14
t 
d
(off)
Turn - off delay time 3.7 6 8.3
V
GE
=5V, R
G
=1K ohm, L=1mH, V
CE
=300V
C 
ies
Input Capacitance
550
825
V
GE
=0V, 
V
CE
=25V, f=1M H z
C 
oes
Output Capacitance
100
150
pF
V
GE
=0V, 
V
CE
=25V, f=1M H z
6
C 
res
Reverse Transfer Capacitance 12 18
V
GE
=0V, V
CE
=25V, f=1M H z
25
L=0.7m H, T
C
=25°C
I 
L
Self-Clamped
15.5
A
L=2.2m H, T
C
=25°C
9
Inductive Switching Current 11.5
L=4.7m H, T
C
=25°C
10
16.5
L=1.5m H, T
C
=150°C
13
7.5
L=4.7m H, T
C
=150°C
14
6
L=8.7m H, T
C
=150°C
T
J
 =150
o
C,
t 
SC
Short Circuit Withstand Time
120
µs
V
CC
 = 16V, L = 10µH
14
R 
G
 = 1K ohm, V
GE
 = 5V










