Datasheet

IRGPS60B120KDP
8 www.irf.com
Fig. 21 - Typical Diode E
RR
vs. I
F
T
J
= 125°C
Fig. 23 - Typical Gate Charge
vs. V
GE
I
CE
= 60A; L = 600µH
Fig. 22- Typ. Capacitance vs. V
CE
V
GE
= 0V; f = 1MHz
0 20 40 60 80 100
I
F
(A)
0
500
1000
1500
2000
2500
3000
3500
4000
E
n
e
r
g
y
(
µ
J
)
4.7
22
47
100
0 20 40 60 80 100
V
CE
(V)
10
100
1000
10000
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Cies
Coes
Cres
0 50 100 150 200 250 300 350 400
Q
G
, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
16
V
G
E
(
V
)
600V
800V