Datasheet

IRGPS60B120KDP
2 www.irf.com
Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge (turn-on) –– 340 510 I
C
= 60A
Qge Gate - Emitter Charge (turn-on) ––– 40 60 nC V
CC
= 600V
Q
gc
Gate - Collector Charge (turn-on) ––– 165 248 V
GE
= 15V
E
on
Turn-On Switching Loss ––– 3214 4870 µJ I
C
= 60A, V
CC
= 600V
E
off
Turn-Off Switching Loss –– 4783 5450 V
GE
= 15V,R
G
= 4.7Ω, L =200µH
E
tot
Total Switching Loss ––– 8000 10320 Ls = 150nH T
J
= 25°C
E
on
Turn-On Switching Loss –– 5032 6890 T
J
= 125°C
E
off
Turn-Off Switching Loss ––– 7457 8385 µJ Energy losses include "tail" and
E
tot
Total Switching Loss ––– 12500 15275 diode reverse recovery.
t
d(on)
Turn-On Delay Time ––– 72 94 I
C
= 15A, V
CC
= 600V
t
r
Rise Time ––– 32 45 V
GE
= 15V, R
G
= 4.7 L =200µH
t
d(off)
Turn-Off Delay Time –– 366 400 ns Ls = 150nH, T
J
= 125°C
t
f
Fall Time ––– 45 58
C
ies
Input Capacitance ––– 4300 ––– V
GE
= 0V
C
oes
Output Capacitance ––– 395 ––– pF V
CC
= 30V
C
res
Reverse Transfer Capacitance –– 160 –– f = 1.0MHz
T
J
= 150°C, I
C
= 240A, Vp =1200V
V
CC
= 1000V, V
GE
= +15V to 0V
R
G
= 4.7
T
J
= 150°C, Vp =1200V
V
CC
= 900V, V
GE
= +15V to 0V,
R
G
= 4.7
Erec Reverse Recovery energy of the diode ––– 3346 –– µJ T
J
= 125°C
t
rr
Diode Reverse Recovery time ––– 180 ––– ns V
CC
= 600V, I
F
= 60A, L =200µH
I
rr
Diode Peak Reverse Recovery Current ––– 50 ––– A V
GE
= 15V,R
G
= 4.7Ω, Ls = 150nH
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Ref.Fig.
5, 6
7, 9
10
11
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage 1200 ––– –– V V
GE
= 0V, I
C
= 500µA
V
(BR)CES
/T
J
Temperature Coeff. of Breakdown Voltage 0.40 ––– V/°C V
GE
= 0V, I
C
= 1.0mA, (25°C-125°C)
V
CE(on)
Collector-to-Emitter Saturation Voltage ––– 2.33 2.50 I
C
= 50A V
GE
= 15V
––– 2.50 2.75 V I
C
= 60A
––– 2.79 3.1 I
C
= 50A, T
J
= 125°C
––– 3.04 3.5 I
C
= 60A, T
J
= 125°C
V
GE(th)
Gate Threshold Voltage 4.0 5.0 6.0 V
CE
= V
GE
, I
C
= 250µA
V
GE(th)
/T
J
Temperature Coeff. of Threshold Voltage –– -12 –– mV/°C V
CE
= V
GE
, I
C
= 1.0mA, (25°C-125°C)
g
fe
Forward Transconductance ––– 34.4 –– S V
CE
= 50V, I
C
= 60A, PW=80µs
I
CES
Zero Gate Voltage Collector Current ––– ––– 500 µA V
GE
= 0V, V
CE
= 1200V
––– 650 1350 V
GE
= 0V, V
CE
= 1200V, T
J
= 125°C
V
FM
Diode Forward Voltage Drop ––– 1.82 2.10 I
C
= 50A
––– 1.93 2.20 V I
C
= 60A
––– 1.96 2.20 I
C
= 50A, T
J
= 125°C
––– 2.13 2.40 I
C
= 60A, T
J
= 125°C
I
GES
Gate-to-Emitter Leakage Current –– ––– ±100 nA V
GE
= ±20V
9,10
11 ,12
8
Ref.Fig.
23
CT1
CT4
WF1
WF2
13,15
14, 16
CT4
WF1
WF2
22
4
CT2
CT3
WF4
17,18,19
20, 21
CT4,WF3
RBSOA Reverse Bias Safe Operting Area FULL SQUARE
SCSOA Short Circuit Safe Operting Area 10 –– –– µs