Datasheet

IRGPS40B120UP
www.irf.com 7
Fig. 17 - Typical Gate Charge vs. V
GE
I
CE
= 40A; L = 600µH
Fig. 16- Typ. Capacitance vs. V
CE
V
GE
= 0V; f = 1MHz
0 20 40 60 80 100
V
CE
(V)
10
100
1000
10000
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Cies
Coes
Cres
0 50 100 150 200 250 300 350 400
Q
G
, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
16
V
G
E
(
V
)
600V
800V
Fig 18. Normalized Transient Thermal Impedance, Junction-to-Case (IGBT)
1E-005 0.0001 0.001 0.01 0.1 1
t
1
, Rectangular Pulse Duration (sec)
0.01
0.1
1
10
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc