Datasheet

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UltraFast IGBT

IRGPS40B120UP

INSULATED GATE BIPOLAR TRANSISTOR

Features

CES

= 1200V

CE(on)

typ. = 3.12V

@ V

= 15V,

= 40A, Tj=25°C

03/15/05

Absolute Maximum Ratings

Parameter Max. Units

CES

Collector-to-Emitter Voltage 1200 V

@ T

= 25°C Continuous Collector Current 80

@ T

= 100°C Continuous Collector Current 40

Pulsed Collector Current 160 A

Clamped Inductive Load Current  160

Gate-to-Emitter Voltage ± 20 V

@ T

= 25°C Maximum Power Dissipation 595

@ T

= 100°C Maximum Power Dissipation 238

Operating Junction and -55 to +150

STG

Storage Temperature Range °C

Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)

• Non Punch Through IGBT Technology.

• 10µs Short Circuit Capability.

• Square RBSOA.

• Positive VCE (on) Temperature Coefficient.

• Super-247 Package.

• Lead-Free

Benefits

www.irf.com 1

• Benchmark Efficiency for Motor Control.

• Rugged Transient Performance.

• Low EMI.

• Significantly Less Snubber Required

• Excellent Current Sharing in Parallel Operation.

Super-247™

Parameter Min. Typ. Max. Units

θJC

Junction-to-Case - IGBT ––– ––– 0.20 °C/W

θCS

Case-to-Sink, flat, greased surface ––– 0.24 –––

θJA

Junction-to-Ambient, typical socket mount ––– ––– 40

Recommended Clip Force 20 (2) ––– ––– N(kgf)

Wt Weight ––– 6.0 (0.21) ––– g (oz)

Le Internal Emitter Inductance (5mm from package) ––– 13 ––– nH

Thermal Resistance

PD- 95899A

n-channel

Summary of content (10 pages)

PAGE 1
PD- 95899A IRGPS40B120UP INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT VCES = 1200V C Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Super-247 Package. • Lead-Free VCE(on) typ. = 3.12V G @ VGE = 15V, E ICE = 40A, Tj=25°C n-channel Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI.
PAGE 2
IRGPS40B120UP Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES ∆V(BR)CES/∆TJ VCE(on) VGE(th) ∆VGE(th)/∆TJ gfe ICES IGES Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 1200 ––– Temperature Coeff. of Breakdown Voltage ––– 0.40 Collector-to-Emitter Saturation Voltage ––– 3.12 ––– 3.39 ––– 3.88 ––– 4.24 Gate Threshold Voltage 4.0 5.0 Temperature Coeff. of Threshold Voltage ––– -12 Forward Transconductance ––– 30.
PAGE 3
IRGPS40B120UP 100 700 600 80 500 IC (A) Ptot (W) 60 40 400 300 200 20 100 0 0 0 20 40 60 80 100 120 140 160 0 50 T C (°C) Fig. 1 - Maximum DC Collector Current vs. Case Temperature 150 200 Fig. 2 - Power Dissipation vs. Case Temperature 1000 1000 2 µs 100 100 10 100 µs 1ms 1 IC A) 10 µs IC (A) 100 T C (°C) 10 10ms DC 0.1 1 10 100 1000 VCE (V) Fig. 3 - Forward SOA TC = 25°C; TJS ≤ 150°C www.irf.com 10000 1 10 100 1000 10000 VCE (V) Fig.
PAGE 4
IRGPS40B120UP 120 80 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 100 60 50 ICE (A) ICE (A) 80 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 70 60 40 30 40 20 20 10 0 0 0 1 2 3 4 5 0 2 VCE (V) 6 VCE (V) Fig. 6 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 80µs Fig. 5 - Typ. IGBT Output Characteristics TJ = -40°C; tp = 80µs 500 80 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.
PAGE 5
IRGPS40B120UP 20 20 18 18 16 16 14 12 ICE = 20A 10 ICE = 40A 8 ICE = 80A VCE (V) VCE (V) 14 ICE = 20A 12 ICE = 40A 10 ICE = 80A 8 6 4 6 2 4 0 2 5 10 15 20 5 10 VGE (V) 15 20 VGE (V) Fig. 10 - Typical VCE vs. VGE TJ = 25°C Fig. 9 - Typical VCE vs. VGE TJ = -40°C 20 18 16 VCE (V) 14 ICE = 20A ICE = 40A ICE = 80A 12 10 8 6 4 2 5 10 15 20 VGE (V) Fig. 11 - Typical VCE vs. VGE TJ = 125°C www.irf.
PAGE 6
IRGPS40B120UP 4500 1000 4000 tdOFF 3500 Energy (µJ) Swiching Time (ns) EON EOFF 3000 2500 2000 1500 tdON 100 tR 1000 tF 500 0 0 20 40 60 10 80 20 IC (A) 60 80 IC (A) Fig. 12 - Typ. Energy Loss vs. IC TJ = 125°C; L=200µH; VCE= 600V RG= 4.7Ω; VGE= 15V Fig. 13 - Typ. Switching Time vs. IC TJ = 125°C; L=200µH; VCE= 600V RG= 4.
PAGE 7
IRGPS40B120UP 16 10000 Cies 14 600V 1000 800V 10 VGE (V) Capacitance (pF) 12 Coes Cres 8 6 100 4 2 0 10 0 20 40 60 80 100 0 50 100 150 200 250 300 350 400 Q G , Total Gate Charge (nC) VCE (V) Fig. 17 - Typical Gate Charge vs. VGE ICE = 40A; L = 600µH Fig. 16- Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz Thermal Response ( Z thJC ) 10 1 D = 0.50 0.20 0.10 0.1 0.05 0.01 0.02 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.
PAGE 8
IRGPS40B120UP L L 80 V VCC DUT DUT 0 1000V Rg 1K Fig.C.T.2 - RBSOA Circuit Fig.C.T.1 - Gate Charge Circuit (turn-on) DRIVER L DIODE CLAMP 900V DC DUT / DRIVER DUT VCC Rg Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit R= DUT VCC ICM VCC Rg Fig.C.T.5 - Resistive Load Circuit 8 www.irf.
PAGE 9
IRGPS40B120UP Fig. WF.1 - Typ. Turn-off Loss Waveform @ Tj=125°C using Fig. CT.4 Fig. WF.2 - Typ. Turn-on Loss Waveform @ Tj=125C using Fig. CT.4 50 1100 1000 40 900 900 90 800 80 700 70 800 500 tf 500 400 20 VCE (V) 600 5% V CE 10 300 400 300 30 5% V CE 100 20 10 0 0 40 90% test current 200 0 100 50 10% test current 5% ICE 200 -100 -0.20 60 TEST CURRENT I CE (A) VCE (V) 600 30 ICE (A) 90% ICE 700 0 Eoff Loss 0.00 0.20 0.40 -100 4.10 -10 0.80 0.60 4.
PAGE 10
IRGPS40B120UP Case Outline and Dimensions — Super-247 Super-247 (TO-274AA) Part Marking Information EXAMPLE: THIS IS AN IRFPS37N50A WITH ASSEMBLY LOT CODE 1789 ASSEMBLED ON WW 19, 1997 IN THE ASSEMBLY LINE "C" PART NUMBER INTERNATIONAL RECTIFIER LOGO IRFPS37N50A 719C 17 89 ASSEMBLY LOT CODE Note: "P" in assembly line position indicates "Lead-Free" DATE CODE YEAR 7 = 1997 WEEK 19 LINE C TOP Data and specifications subject to change without notice.