Datasheet

www.irf.com © 2014 International Rectifier Submit Datasheet Feedback March 27, 2014
4
IRGPS4067DPbF
Fig. 6 - Typ. IGBT Output Characteristics
T
J
= -40°C; tp = 80µs
Fig. 7 - Typ. IGBT Output Characteristics
T
J
= 25°C; tp = 80µs
0 1 2 3 4 5 6 7 8 9 10
V
CE
(V)
0
50
100
150
200
250
300
350
I
C
E
(
A
)
V
GE
= 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0 2 4 6 8 10
V
CE
(V)
0
50
100
150
200
250
300
350
I
C
E
(
A
)
V
GE
= 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
Fig. 8 - Typ. IGBT Output Characteristics
T
J
= 175°C; tp = 80µs
Fig. 9 - Typ. Diode Forward Characteristics
tp = 80µs
Fig. 11 - Typical V
CE
vs. V
GE
T
J
= 25°C
Fig. 10 - Typical V
CE
vs. V
GE
T
J
= -40°C
0 2 4 6 8 10
V
CE
(V)
0
50
100
150
200
250
300
350
I
C
E
(
A
)
V
GE
= 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0.0 1.0 2.0 3.0 4.0 5.0 6.0
V
F
(V)
0
100
200
300
400
500
600
I
F
(
A
)
-40°C
25°C
175°C
5 101520
V
GE
(V)
0
5
10
15
20
25
V
C
E
(
V
)
I
CE
= 60A
I
CE
= 120A
I
CE
= 195A
5 101520
V
GE
(V)
0
5
10
15
20
25
V
C
E
(
V
)
I
CE
= 60A
I
CE
= 120A
I
CE
= 195A