Datasheet
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
E
G
n-channel
C
V
CES
= 600V
I
C(Nominal)
= 120A
t
SC
≥ 5µs, T
J(max)
= 175°C
V
CE(on)
typ. = 1.70V
Features
• Low V
CE (on)
Trench IGBT Technology
• Low Switching Losses
• 5µs SCSOA
• Square RBSOA
• 100% of The Parts Tested for I
LM
• Positive V
CE (on)
Temperature Coefficient.
• Ultra Fast Soft Recovery Co-pak Diode
• Tighter Distribution of Parameters
• Lead-Free, RoHS Compliant
Benefits
• High Efficiency in a Wide Range of Applications
• Suitable for a Wide Range of Switching Frequencies due
to Low V
CE (ON)
and Low Switching Losses
• Rugged Transient Performance for Increased Reliability
• Excellent Current Sharing in Parallel Operation
• Low EMI
GC E
Gate Collector Emitter
Super-247
G
C
E
C
Absolute Maximum Ratings
Parameter Max. Units
V
CES
Collector-to-Emitter Voltage 600 V
I
C
@ T
C
= 25°C Continuous Collector Current
240
I
C
@ T
C
= 100°C Continuous Collector Current
160
I
NOMINAL
Nominal Current 120
I
CM
Pulse Collector Current, V
GE
= 15V
360
I
LM
Clamped Inductive Load Current, V
GE
= 20V
480 A
I
F
@ T
C
= 25°C Diode Continous Forward Current 240
I
F
@ T
C
= 100°C Diode Continous Forward Current 160
I
FM
Diode Maximum Forward Current
480
V
GE
Continuous Gate-to-Emitter Voltage ±20 V
Transient Gate-to-Emitter Voltage ±30
P
D
@ T
C
= 25°C Maximum Power Dissipation 750 W
P
D
@ T
C
= 100°C Maximum Power Dissipation 375
T
J
Operating Junction and -55 to +175
T
STG
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Thermal Resistance
Parameter Min. Typ. Max. Units
R
θJC
(IGBT)
Thermal Resistance Junction-to-Case-(each IGBT)
––– ––– 0.20
R
θJC
(Diode)
Thermal Resistance Junction-to-Case-(each Diode)
––– ––– 0.63 °C/W
R
θCS
Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.24 –––
R
θJA
Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– ––– 40
IRGPS4067DPbF
1
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