Datasheet

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INSULATED GATE BIPOLAR TRANSISTOR WITH

ULTRAFAST SOFT RECOVERY DIODE

n-channel

CES

= 600V

C(Nominal)

= 120A

≥ 5µs, T

J(max)

= 175°C

CE(on)

typ. = 1.70V

Features

• Low V

CE (on)

Trench IGBT Technology

• Low Switching Losses

• 5µs SCSOA

• Square RBSOA

• 100% of The Parts Tested for I



• Positive V

CE (on)

Temperature Coefficient.

• Ultra Fast Soft Recovery Co-pak Diode

• Tighter Distribution of Parameters

• Lead-Free, RoHS Compliant

Benefits

• High Efficiency in a Wide Range of Applications

• Suitable for a Wide Range of Switching Frequencies due

to Low V

CE (ON)

and Low Switching Losses

• Rugged Transient Performance for Increased Reliability

• Excellent Current Sharing in Parallel Operation

• Low EMI

GC E

Gate Collector Emitter

Super-247

Absolute Maximum Ratings

Parameter Max. Units

CES

Collector-to-Emitter Voltage 600 V

@ T

= 25°C Continuous Collector Current

240

@ T

= 100°C Continuous Collector Current

160

NOMINAL

Nominal Current 120

Pulse Collector Current, V

= 15V

360

Clamped Inductive Load Current, V

= 20V

480 A

@ T

= 25°C Diode Continous Forward Current 240

@ T

= 100°C Diode Continous Forward Current 160

Diode Maximum Forward Current

480

Continuous Gate-to-Emitter Voltage ±20 V

Transient Gate-to-Emitter Voltage ±30

@ T

= 25°C Maximum Power Dissipation 750 W

@ T

= 100°C Maximum Power Dissipation 375

Operating Junction and -55 to +175

STG

Storage Temperature Range °C

Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)

Thermal Resistance

Parameter Min. Typ. Max. Units

θJC

(IGBT)

Thermal Resistance Junction-to-Case-(each IGBT)

––– ––– 0.20

θJC

(Diode)

Thermal Resistance Junction-to-Case-(each Diode)

––– ––– 0.63 °C/W

θCS

Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.24 –––

θJA

Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– ––– 40

IRGPS4067DPbF

Summary of content (10 pages)

PAGE 1
IRGPS4067DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • • • • • • • • • Low VCE (on) Trench IGBT Technology Low Switching Losses 5µs SCSOA Square RBSOA 100% of The Parts Tested for ILM Positive VCE (on) Temperature Coefficient. Ultra Fast Soft Recovery Co-pak Diode Tighter Distribution of Parameters Lead-Free, RoHS Compliant VCES = 600V IC(Nominal) = 120A tSC ≥ 5µs, TJ(max) = 175°C G VCE(on) typ. = 1.
PAGE 2
IRGPS4067DPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions 600 — — V VGE = 0V, IC = 100µA T emperatureCoeff. of B reakdown Voltage — 0.27 — V/°C — 1.70 2.05 VCE(on) Collector-to-Emitter Saturation Voltage — 2.15 — — 2.20 — VGE(th) Gate Threshold Voltage 4.0 — ∆VGE (th)/∆T J Threshold Voltage temp.
PAGE 3
IRGPS4067DPbF 220 For both: Duty cycle : 50% Tj = 175°C Tcase = 100°C Gate drive as specified Power Dissipation = 375W 200 Load Current ( A ) 180 160 Square Wave: 140 VCC 120 100 I 80 60 Diode as specified 40 20 0.1 1 10 100 f , Frequency ( kHz ) Fig. 1 - Typical Load Current vs.
PAGE 4
IRGPS4067DPbF 350 350 300 300 250 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 200 150 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 200 ICE (A) ICE (A) 250 150 100 100 50 50 0 0 0 1 2 3 4 5 6 7 8 9 0 10 2 4 Fig. 6 - Typ. IGBT Output Characteristics TJ = -40°C; tp = 80µs 350 Fig. 7 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 80µs -40°C 25°C 175°C 500 250 400 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.
PAGE 5
IRGPS4067DPbF 25 IC, Collector-to-Emitter Current (A) 350 VCE (V) 20 15 ICE = 60A ICE = 120A ICE = 195A 10 5 300 T J = -40°C T J = 25°C 250 T J = 175°C 200 150 100 50 0 0 5 10 15 3 20 5 6 7 8 9 10 11 12 VGE, Gate-to-Emitter Voltage (V) VGE (V) Fig. 12 - Typical VCE vs. VGE TJ = 175°C Fig. 13 - Typ.
PAGE 6
IRGPS4067DPbF 40 40 RG = 4.7Ω 35 35 IRR (A) IRR (A) RG = 10Ω RG = 20Ω 30 RG = 50Ω 25 30 25 20 20 0 50 100 150 200 250 0 10 20 IF (A) 4500 4.7Ω 4000 QRR (nC) 35 IRR (A) 50 Fig. 19 - Typ. Diode IRR vs. RG TJ = 175°C 40 30 25 10Ω 3500 240A 20Ω 3000 2500 120A 60A 50Ω 2000 20 350 400 450 500 550 200 600 300 400 500 600 700 800 diF /dt (A/µs) diF /dt (A/µs) Fig. 21 - Typ. Diode QRR vs. diF/dt VCC = 400V; VGE = 15V; TJ = 175°C Fig. 20 - Typ. Diode IRR vs.
PAGE 7
IRGPS4067DPbF 16 VGE, Gate-to-Emitter Voltage (V) Capacitance (pF) 100000 Cies 10000 1000 Coes Cres V CES = 300V 14 V CES = 400V 12 10 8 6 4 2 100 0 0 20 40 60 80 100 0 50 VCE (V) 100 150 200 250 Q G, Total Gate Charge (nC) Fig. 25 - Typical Gate Charge vs. VGE ICE = 120A; L = 100µH Fig. 24 - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz Thermal Response ( Z thJC ) 1 0.1 D = 0.50 0.20 0.10 0.01 R1 R1 0.05 τJ 0.02 0.
PAGE 8
IRGPS4067DPbF L L DUT 0 VCC 80 V + - 1K DUT VCC Rg Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit diode clamp / DUT L 4X DC -5V VCC DUT / DRIVER DUT VCC Rg SCSOA Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit C force R= VCC ICM 100K D1 DUT 22K C sense VCC Rg G force DUT 0.0075µF E sense E force Fig.C.T.5 - Resistive Load Circuit 8 www.irf.com © 2014 International Rectifier Fig.C.T.
PAGE 9
IRGPS4067DPbF 210 700 600 180 600 500 150 500 150 400 120 400 120 210 tr 90 90% ICE 200 60 10% ICE 100 200 60 10% tes t current 5% VCE 30 0 0 0 Eoff Loss -100 -200 -100 0 Eon Loss -100 -400 -300 -200 -100 0 -30 100 200 300 400 500 Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 175°C using Fig. CT.4 Fig. WF2 - Typ. Turn-on Loss Waveform @ TJ = 175°C using Fig. CT.
PAGE 10
IRGPS4067DPbF Case Outline and Dimensions — Super-247 Super-247 (TO-274AA) Part Marking Information EXAMPLE: THIS IS AN IRFPS37N50A WITH ASSEMBLY LOT CODE 1789 ASSEMBLED ON WW 19, 1997 IN THE ASSEMBLY LINE "C" PART NUMBER INTERNATIONAL RECTIFIER LOGO IRFPS37N50A 719C 17 89 ASSEMBLY LOT CODE Note: "P" in assembly line position indicates "Lead-Free" DATE CODE YEAR 7 = 1997 WEEK 19 LINE C TOP Note: For the most current drawing please refer to IR website at http://www.irf.