Datasheet

IRGP50B60PD1PbF
www.irf.com 5
Fig. 14 - Typ. Switching Time vs. R
G
T
J
= 125°C; L = 200µH; V
CE
= 390V, I
CE
= 33A; V
GE
= 15V
Diode clamp used: 30ETH06 (See C.T.3)
Fig. 13 - Typ. Energy Loss vs. R
G
T
J
= 125°C; L = 200µH; V
CE
= 390V, I
CE
= 33A; V
GE
= 15V
Diode clamp used: 30ETH06 (See C.T.3)
Fig. 16- Typ. Capacitance vs. V
CE
V
GE
= 0V; f = 1MHz
Fig. 15- Typ. Output Capacitance
Stored Energy vs. V
CE
Fig. 17 - Typical Gate Charge vs. V
GE
I
CE
= 33A
0 5 10 15 20 25
R
G
(
Ω
)
300
400
500
600
700
800
900
1000
E
n
e
r
g
y
(
µ
J
)
E
ON
E
OFF
0 5 10 15 20 25
R
G
(
Ω
)
10
100
1000
S
w
i
c
h
i
n
g
T
i
m
e
(
n
s
)
t
R
td
OFF
t
F
td
ON
0 50 100 150 200 250
Q
G
, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
16
V
G
E
(
V
)
400V
0 20 40 60 80 100
V
CE
(V)
10
100
1000
10000
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Cies
Coes
Cres
0 100 200 300 400 500 600 700
V
CE
(V)
0
10
20
30
40
E
o
e
s
(
µ
J
)
Fig. 18 - Normalized Typ. V
CE(on)
vs. Junction Temperature
I
C
= 33A, V
GE
= 15V
-50 0 50 100 150 200
T
J
(°C)
0.8
1.0
1.2
1.4
N
o
r
m
a
l
i
z
e
d
V
C
E
(
o
n
)
(
V
)