Datasheet

IRGP4660DPbF/IRGP4660D-EPbF
www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 17, 2014
2
Notes:
 V
CC
= 80% (V
CES
), V
GE
= 20V, L = 200μH, R
G
= 10Ω.
 R
θ
is measured at T
J
of approximately 90°C.
 Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely.
 Pulse width limited by max. junction temperature.
 Values influenced by parasitic L and C in measurement.
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage 600 — — V V
GE
= 0V, I
C
= 150μA
Δ
V
(BR)CES
/
Δ
T
J
Temperature Coeff. of Breakdown Voltage — 0.30 — V/°C V
GE
= 0V, I
C
= 1mA (25°C-175°C)
— 1.60 1.90 I
C
= 48A, V
GE
= 15V, T
J
= 25°C
V
CE(on)
Collector-to-Emitter Saturation Voltage — 1.90 — V I
C
= 48A, V
GE
= 15V, T
J
= 150°C
—2.00— I
C
= 48A, V
GE
= 15V, T
J
= 175°C
V
GE(th)
Gate Threshold Voltage 4.0 — 6.5 V V
CE
= V
GE
, I
C
= 1.4mA
Δ
V
GE(th)
/
Δ
T
J
Threshold Voltage temp. coefficient — -21 — mV/°C V
CE
= V
GE
, I
C
= 1.0mA (25°C - 175°C)
gfe Forward Transconductance — 32 — S V
CE
= 50V, I
C
= 48A, PW = 80μs
I
CES
Collector-to-Emitter Leakage Current — 1.0 150 V
GE
= 0V, V
CE
= 600V
— 450 1000 V
GE
= 0V, V
CE
= 600V, T
J
= 175°C
V
FM
Diode Forward Voltage Drop — 1.95 2.91 I
F
= 48A
—1.45— I
F
= 48A, T
J
= 175°C
I
GES
Gate-to-Emitter Leakage Current — — ±100 nA V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
Q
g
Total Gate Charge (turn-on) — 95 140 I
C
= 48A
Q
ge
Gate-to-Emitter Charge (turn-on) — 28 42 nC V
GE
= 15V
Q
gc
Gate-to-Collector Charge (turn-on) — 35 53 V
CC
= 400V
E
on
Turn-On Switching Loss — 625 1141 I
C
= 48A, V
CC
= 400V, V
GE
= 15V
E
off
Turn-Off Switching Loss — 1275 1481 μJR
G
= 10
Ω
, L = 200μH, L
S
= 150nH, T
J
= 25°C
E
total
Total Switching Loss — 1900 2622
Energy losses include tail & diode reverse recovery
t
d(on)
Turn-On delay time — 60 78 I
C
= 48A, V
CC
= 400V, V
GE
= 15V
t
r
Rise time —4056nsR
G
= 10
Ω
, L = 200μH, L
S
= 150nH, T
J
= 25°C
t
d(off)
Turn-Off delay time — 145 176
t
f
Fall time — 35 46
E
on
Turn-On Switching Loss — 1625 — I
C
= 48A, V
CC
= 400V, V
GE
=15V
E
off
Turn-Off Switching Loss — 1585 — μJR
G
=10Ω, L=200μH, L
S
=150nH, T
J
= 175°C
E
total
Total Switching Loss — 3210 —
Energy losses include tail & diode reverse recovery
t
d(on)
Turn-On delay time — 55 — I
C
= 48A, V
CC
= 400V, V
GE
= 15V
t
r
Rise time — 45 — ns R
G
= 10
Ω
, L = 200μH, L
S
= 150nH
t
d(off)
Turn-Off delay time — 165 — T
J
= 175°C
t
f
Fall time — 45 —
C
ies
Input Capacitance — 3025 — pF V
GE
= 0V
C
oes
Output Capacitance — 245 — V
CC
= 30V
C
res
Reverse Transfer Capacitance — 90 — f = 1.0Mhz
T
J
= 175°C, I
C
= 192A
RBSOA Reverse Bias Safe Operating Area FULL SQUARE V
CC
= 480V, Vp =600V
Rg = 10
Ω
, V
GE
= +15V to 0V
SCSOA Short Circuit Safe Operating Area 5 — — μsV
CC
= 400V, Vp =600V
Rg = 10
Ω
, V
GE
= +15V to 0V
Erec Reverse Recovery Energy of the Diode — 845 — μJT
J
= 175°C
t
rr
Diode Reverse Recovery Time — 115 — ns V
CC
= 400V, I
F
= 48A
I
rr
Peak Reverse Recovery Current — 40 — A V
GE
= 15V, Rg = 10
Ω
, L =200μH, L
s
= 150nH
Conditions
μA
V