Datasheet

IRGS/SL/B/P4640D/EPbF
4 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback January 20, 2015
25 50 75 100 125 150 175
T
C
(°C)
0
10
20
30
40
50
60
70
I
C
(
A
)
25 50 75 100 125 150 175
T
C
(°C)
0
50
100
150
200
250
300
P
t
o
t
(
W
)
1 10 100 1000 10000
V
CE
(V)
0.1
1
10
100
1000
I
C
(
A
)
1msec
10µsec
100µsec
Tc = 25°C
Tj = 175°C
Single Pulse
DC
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
10 100 1000
V
CE
(V)
1
10
100
1000
I
C
(
A
)
Fig. 4 - Reverse Bias SOA
T
J
= 175°C; VGE = 20V
Fig. 2 - Power Dissipation vs.
Case Temperature
0 1 2 3 4 5 6 7 8
V
CE
(V)
0
10
20
30
40
50
60
70
80
90
I
C
E
(
A
)
V
GE
= 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
Fig. 5 - Typ. IGBT Output Characteristics
T
J = -40°C; tp = 80µs
Fig. 3 - Forward SOA
T
C
= 25°C; T
J
175°C; V
GE
= 15V
0 1 2 3 4 5 6 7 8
V
CE
(V)
0
10
20
30
40
50
60
70
80
90
I
C
E
(
A
)
V
GE
= 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
Fig. 6 - Typ. IGBT Output Characteristics
T
J = 25°C; tp = 80µs