Datasheet

IRGS/SL/B/P4640D/EPbF
3 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback January 20, 2015
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max Units Conditions
Q
g
Total Gate Charge 50 75
nC
I
C
= 24A
Q
ge
Gate-to-Emitter Charge 13 20
V
GE
= 15V
Q
gc
Gate-to-Collector Charge 21 31
V
CC
= 400V
E
on
Turn-On Switching Loss 115 201
µJ
I
C
= 24A, V
CC
= 400V, V
GE
=15V
R
G
= 10Ω, L = 200µH, L
S
= 150nH,
T
J
= 25°C
Energy losses include tail & diode
reverse recovery
E
off
Turn-Off Switching Loss 600 700
E
total
Total Switching Loss 715 901
t
d(on)
Turn-On delay time 41 53
ns
t
r
Rise time 22 31
t
d(off)
Turn-Off delay time 104 115
t
f
Fall time 29 41
E
on
Turn-On Switching Loss 420
µJ
I
C
= 24A, V
CC
= 400V, V
GE
=15V
R
G
= 10Ω, L = 200µH, L
S
= 150nH,
T
J
= 175°C
Energy losses include tail & diode
reverse recovery
E
off
Turn-Off Switching Loss 840
E
total
Total Switching Loss 1260
t
d(on)
Turn-On delay time 40
ns
t
r
Rise time 24
t
d(off)
Turn-Off delay time 125
t
f
Fall time 39
C
ies
Input Capacitance 1490 V
GE
= 0V
C
oes
Output Capacitance 129
pF V
CC
= 30V
C
res
Reverse Transfer Capacitance 45
f = 1.0MHz
RBSOA Reverse Bias Safe Operating Area
T
J
= 175°C, I
C
= 96A
FULL SQUARE V
CC
= 480V, Vp 600V
R
G
= 10, V
GE
= +20V to 0V
SCSOA Short Circuit Safe Operating Area 5.0 µs
V
CC
= 400V, Vp 600V
R
G
= 10, V
GE
= +15V to 0V
Erec Reverse Recovery Energy of the Diode 621 µJ T
J
= 175°C
t
rr
Diode Reverse Recovery Time 89 ns
V
CC
= 400V, I
F
= 24A, V
GE
= 15V,
I
rr
Peak Reverse Recovery Current 37 A
Rg = 10Ω, L = 200µH, L
S
= 150nH