Datasheet
IRGS/SL/B/P4640D/EPbF
2 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback January 20, 2015
Thermal Resistance
Parameter
Min. Typ. Max.
Units
Thermal Resistance Junction-to-Case (D
2
Pak, TO-220, TO-262)
––– ––– 0.60
°C/W
Thermal Resistance Junction-to-Case (TO-247)
––– ––– 0.60
R
θ
JC
(Diode)
Thermal Resistance Junction-to-Case (D
2
Pak, TO-220, TO-262)
––– ––– 1.53
Thermal Resistance Junction-to-Case (TO-247)
––– ––– 1.62
R
θ
CS
Thermal Resistance, Case-to-Sink (flat, greased surface– TO 220, D
2
Pak, TO-262)
––– 0.50 –––
Thermal Resistance, Case-to-Sink (flat, greased surface– TO 247)
––– 0.24 –––
R
θ
JA
Thermal Resistance, Junction-to-Ambient (PCB Mount - D
2
Pak, TO-262)
––– ––– 40
Thermal Resistance, Junction-to-Ambient (Socket Mount –TO-247)
––– ––– 40
Thermal Resistance, Junction-to-Ambient (Socket Mount –TO-220)
––– ––– 62
R
θ
JC
(IGBT)
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage 600 — — V V
GE
= 0V, I
C
= 100µA
ΔV
(BR)CES
/ΔT
J
Temperature Coeff. of Breakdown Voltage
— 0.30 — V/°C V
GE
= 0V, I
C
= 1mA (25°C-175°C)
V
CE(on)
Collector-to-Emitter Saturation Voltage
— 1.60 1.90 I
C
= 24A, V
GE
= 15V, T
J
= 25°C
— 1.90 — I
C
= 24A, V
GE
= 15V, T
J
= 150°C
V
GE(th)
Gate Threshold Voltage 4.0 — 6.5 V V
CE
= V
GE
, I
C
= 700µA
ΔV
GE(th)
/ΔT
J
Threshold Voltage Temp. Coefficient — -18 — mV/°C V
CE
= V
GE
, I
C
= 1.0mA (25°C-175°C)
gfe Forward Transconductance — 17 — S V
CE
= 50V, I
C
= 24A, PW = 80µs
I
CES
Collector-to-Emitter Leakage Current
— 2.0 25 µA V
GE
= 0V, V
CE
= 600V
— 775 — V
GE
= 0V, V
CE
= 600V, T
J
= 175°C
I
GES
Gate-to-Emitter Leakage Current
— — ±100 nA V
GE
= ±20V
V
FM
Diode Forward Voltage Drop
— 1.8 2.6 V I
F
= 24A
— 1.28 —
I
F
= 24A, T
J
= 175°C
— 2.0 — I
C
= 24A, V
GE
= 15V, T
J
= 175°C
V