Datasheet

IRGP4069DPbF/IRGP4069D-EPbF
6 www.irf.com
Fig. 19 - Typ. Diode I
RR
vs. di
F
/dt
V
CC
= 400V; V
GE
= 15V; I
F
= 35A; T
J
= 175°C
Fig. 20 - Typ. Diode Q
RR
vs. di
F
/dt
V
CC
= 400V; V
GE
= 15V; T
J
= 175°C
Fig. 23 - Typ. Capacitance vs. V
CE
V
GE
= 0V; f = 1MHz
Fig. 24 - Typical Gate Charge vs. V
GE
I
CE
= 35A; L = 740μH
Fig. 21 - Typ. Diode E
RR
vs. I
F
T
J
= 175°C
Fig. 22 - V
GE
vs. Short Circuit Time
V
CC
= 400V; T
C
= 25°C
0 100 200 300 400 500
V
CE
(V)
10
100
1000
10000
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Cies
Coes
Cres
0 10203040506070
Q
G
, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
16
V
G
E
,
G
a
t
e
-
t
o
-
E
m
i
t
t
e
r
V
o
l
t
a
g
e
(
V
)
V
CES
= 400V
V
CES
= 300V
200 300 400 500 600 700
di
F
/dt (A/μs)
14
16
18
20
22
24
26
I
R
R
(
A
)
10 20 30 40 50 60 70
I
F
(A)
100
150
200
250
300
350
400
E
n
e
r
g
y
(
μ
J
)
R
G
= 100
Ω
R
G
= 47
Ω
R
G
= 22
Ω
R
G
= 10
Ω
8 1012141618
V
GE
(V)
0
5
10
15
20
T
i
m
e
(
μ
s
)
0
75
150
225
300
C
u
r
r
e
n
t
(
A
)
T
sc
I
sc
100 200 300 400 500 600 700 800 900
di
F
/dt (A/μs)
1000
1250
1500
1750
2000
2250
2500
Q
R
R
(
n
C
)
10
Ω
22
Ω
100
Ω
47
Ω
35A
70A
18A