Datasheet

IRGP4069DPbF/IRGP4069D-EPbF
4 www.irf.com
Fig. 7 - Typ. IGBT Output Characteristics
T
J
= 175°C; tp = ≤60μs
Fig. 8 - Typ. Diode Forward Characteristics
tp = 80μs
Fig. 10 - Typical V
CE
vs. V
GE
T
J
= 25°C
Fig. 11 - Typical V
CE
vs. V
GE
T
J
= 175°C
Fig. 12 - Typ. Transfer Characteristics
V
CE
= 50V; tp = 60μs
Fig. 9 - Typical V
CE
vs. V
GE
T
J
= -40°C
0 2 4 6 8 10
V
CE
(V)
0
20
40
60
80
100
120
140
I
C
E
(
A
)
V
GE
= 18V
V
GE
= 15V
V
GE
= 12V
V
GE
= 10V
V
GE
= 8.0V
0.0 1.0 2.0 3.0 4.0
V
F
(V)
0
20
40
60
80
100
120
140
I
F
(
A
)
-40°C
25°C
175°C
5 101520
V
GE
(V)
0
2
4
6
8
10
12
14
16
18
20
V
C
E
(
V
)
I
CE
= 18A
I
CE
= 35A
I
CE
= 70A
5 101520
V
GE
(V)
0
2
4
6
8
10
12
14
16
18
20
V
C
E
(
V
)
I
CE
= 18A
I
CE
= 35A
I
CE
= 70A
5101520
V
GE
(V)
0
2
4
6
8
10
12
14
16
18
20
V
C
E
(
V
)
I
CE
= 18A
I
CE
= 35A
I
CE
= 70A
4 5 6 7 8 9 10 11 12 13 14
V
GE,
Gate-to-Emitter Voltage (V)
0
20
40
60
80
100
120
140
I
C
,
C
o
l
l
e
c
t
o
r
-
t
o
-
E
m
i
t
t
e
r
C
u
r
r
e
n
t
(
A
)
T
J
= 175°C
T
J
= 25°C