Datasheet

IRGP4069DPbF/IRGP4069D-EPbF
2 www.irf.com
Notes:
 V
CC
= 80% (V
CES
), V
GE
= 20V, L = 19μH, R
G
= 10Ω.
 Pulse width limited by max. junction temperature.
 Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely.
 R
θ
is measured at T
J
of approximately 90°C.
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
600——V
V
GE
= 0V, I
C
= 100μA
ΔV
(BR)CES
/ΔT
J
Temperature Coeff. of Breakdown Voltage —1.3—mV/°C
V
GE
= 0V, I
C
= 1mA (25°C-175°C)
— 1.6 1.85
I
C
= 35A, V
GE
= 15V, T
J
= 25°C
V
CE(on)
Collector-to-Emitter Saturation Voltage — 1.9 — V
I
C
= 35A, V
GE
= 15V, T
J
= 150°C
—2.0—
I
C
= 35A, V
GE
= 15V, T
J
= 175°C
V
GE(th)
Gate Threshold Voltage 4.0 — 6.5 V
V
CE
= V
GE
, I
C
= 1.0mA
Δ
V
GE(th)
/
Δ
TJ
Threshold Voltage temp. coefficient — -18 — mV/°C
V
CE
= V
GE
, I
C
= 1.0mA (25°C - 175°C)
gfe Forward Transconductance — 25 — S
V
CE
= 50V, I
C
= 35A, PW = 60μs
I
CES
Collector-to-Emitter Leakage Current — 1.0 70 μA
V
GE
= 0V, V
CE
= 600V
— 770 —
V
GE
= 0V, V
CE
= 600V, T
J
= 175°C
V
FM
Diode Forward Voltage Drop — 2.2 3.8 V
I
F
= 35A
—1.4—
I
F
= 35A, T
J
= 175°C
I
GES
Gate-to-Emitter Leakage Current — — ±100 nA
V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
Q
g
Total Gate Charge (turn-on) — 69 104
I
C
= 35A
Q
ge
Gate-to-Emitter Charge (turn-on) — 18 27 nC
V
GE
= 15V
Q
gc
Gate-to-Collector Charge (turn-on) — 29 44
V
CC
= 400V
E
on
Turn-On Switching Loss — 390 508
I
C
= 35A, V
CC
= 400V, V
GE
= 15V
E
off
Turn-Off Switching Loss — 632 753 μJ
R
G
= 10
Ω
, L = 200μH, L
S
= 150nH, T
J
= 25°C
E
total
Total Switching Loss — 1022 1261
Energy losses include tail & diode reverse recovery
t
d(on)
Turn-On delay time — 46 56
I
C
= 35A, V
CC
= 400V, V
GE
= 15V
t
r
Rise time — 33 42 ns
R
G
= 10Ω, L = 200μH, L
S
= 150nH, T
J
= 25°C
t
d(off)
Turn-Off delay time — 105 117
t
f
Fall time — 44 54
E
on
Turn-On Switching Loss — 1013 —
I
C
= 35A, V
CC
= 400V, V
GE
=15V
E
off
Turn-Off Switching Loss — 929 — μJ
R
G
=10Ω, L=200μH, L
S
=150nH, T
J
= 175°C
E
total
Total Switching Loss — 1942 —
Energy losses include tail & diode reverse recovery
t
d(on)
Turn-On delay time — 43 —
I
C
= 35A, V
CC
= 400V, V
GE
= 15V
t
r
Rise time — 35 — ns
R
G
= 10
Ω
, L = 200μH, L
S
= 150nH
t
d(off)
Turn-Off delay time — 127 —
T
J
= 175°C
t
f
Fall time — 61 —
C
ies
Input Capacitance — 2113 — pF
V
GE
= 0V
C
oes
Output Capacitance — 197 —
V
CC
= 30V
C
res
Reverse Transfer Capacitance — 65 — f = 1.0Mhz
T
J
= 175°C, I
C
= 140A
RBSOA Reverse Bias Safe Operating Area FULL SQUARE
V
CC
= 480V, Vp =600V
Rg = 10
Ω
, V
GE
= +20V to 0V
SCSOA Short Circuit Safe Operating Area 5 — — μs
V
CC
= 400V, Vp =600V
Rg = 10
Ω
, V
GE
= +15V to 0V
Erec Reverse Recovery Energy of the Diode — 304 — μJ
T
J
= 175°C
t
rr
Diode Reverse Recovery Time — 120 — ns
V
CC
= 400V, I
F
= 35A
I
rr
Peak Reverse Recovery Current — 25 — A
V
GE
= 15V, Rg = 10
Ω
, L =210μH, L
s
= 150nH
Conditions