Datasheet
IRGP4068DPbF/IRGP4068D-EPbF
2 www.irf.com
Notes:
V
CC
= 80% (V
CES
), V
GE
= 20V, L = 200μH, R
G
= 10Ω.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely.
fsw = 20KHz, refer to figure 19.
Sinusoidal half wave, t=10ms.
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Ref.Fig
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
600 — — V
V
GE
= 0V, I
C
= 100μA
CT6
ΔV
(BR)CES
/ΔT
J
Temperature Coeff. of Breakdown Voltage
—0.30—V/°C
V
GE
= 0V, I
C
= 1mA (25°C-175°C)
CT6
—1.652.14
I
C
= 48A, V
GE
= 15V, T
J
= 25°C
4,5,6
V
CE(on)
Collector-to-Emitter Saturation Voltage — 2.0 — V
I
C
= 48A, V
GE
= 15V, T
J
= 150°C
8,9,10
—2.05—
I
C
= 48A, V
GE
= 15V, T
J
= 175°C
V
GE(th)
Gate Threshold Voltage 4.0 — 6.5 V
V
CE
= V
GE
, I
C
= 1.4mA
8,9,10,11,20
gfe Forward Transconductance — 32 — S
V
CE
= 50V, I
C
= 48A, PW = 80μs
I
CES
Collector-to-Emitter Leakage Current — 1.0 150 μA
V
GE
= 0V, V
CE
= 600V
— 450 1000
V
GE
= 0V, V
CE
= 600V, T
J
= 175°C
V
FM
Diode Forward Voltage Drop — 0.96 1.05 V
I
F
= 8.0A
7
—0.810.86
I
F
= 8.0A, T
J
= 150°C
I
GES
Gate-to-Emitter Leakage Current — — ±100 nA
V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
Ref.Fig
Q
g
Total Gate Charge (turn-on) — 95 140
I
C
= 48A
18
Q
ge
Gate-to-Emitter Charge (turn-on) — 28 42 nC
V
GE
= 15V
CT1
Q
gc
Gate-to-Collector Charge (turn-on) — 35 53
V
CC
= 400V
I
C
= 48A, V
CC
= 400V, V
GE
= 15V
E
off
Turn-Off Switching Loss — 1275 1481 μJ
R
G
= 10
Ω
, L = 200μH,T
J
= 25°C
CT4
Energy losses include tail
t
d(off)
Turn-Off delay time — 145 176 ns
I
C
= 48A, V
CC
= 400V, V
GE
= 15V
t
f
Fall time — 35 46
R
G
= 10Ω, L = 200μH,T
J
= 25°C
I
C
= 48A, V
CC
= 400V, V
GE
= 15V
E
off
Turn-Off Switching Loss — 1585 — μJ
R
G
= 10Ω, L = 200μH,T
J
= 175°C
CT4
Energy losses include tail
t
d(off)
Turn-Off delay time — 165 — ns
I
C
= 48A, V
CC
= 400V, V
GE
= 15V
WF1
t
f
Fall time — 45 —
R
G
=10
Ω
, L=200μH, T
J
= 175°C
C
ies
Input Capacitance — 3025 —
V
GE
= 0V
17
C
oes
Output Capacitance — 245 — pF
V
CC
= 30V
C
res
Reverse Transfer Capacitance — 90 — f = 1.0Mhz
T
J
= 175°C, I
C
= 192A
3
RBSOA Reverse Bias Safe Operating Area FULL SQUARE
V
CC
= 480V, Vp =600V
CT2
Rg = 10
Ω
, V
GE
= +20V to 0V
SCSOA Short Circuit Safe Operating Area 5 — — μs
V
CC
= 400V, Vp =600V
16, CT3
Rg = 10
Ω
, V
GE
= +15V to 0V
WF2
Conditions