Datasheet

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE
FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS
IRGP4068DPbF
IRGP4068D-EPbF
1 www.irf.com
07/27/09
E
G
n-channel
C
V
CES
= 600V
I
C
= 48A, T
C
= 100°C
t
SC
≥ 5μs, T
J(max)
= 175°C
V
CE(on)
typ. = 1.65V
Features
• Low V
CE (ON)
Trench IGBT Technology
• Low Switching Losses
• Maximum Junction temperature 175 °C
•5 μS short circuit SOA
• Square RBSOA
• 100% of the parts tested for I
LM

• Positive V
CE (ON)
Temperature co-efficient
• Ultra-low V
F
Hyperfast Diode
• Tight parameter distribution
• Lead Free Package
Benefits
• Device optimized for induction heating and soft switching
applications
• High Efficiency due to Low V
CE(on)
, Low Switching Losses
and Ultra-low V
F
• Rugged transient Performance for increased reliability
• Excellent Current sharing in parallel operation
• Low EMI
G
C
E
Gate Collector Emitter
TO-247AC
IRGP4068DPbF
TO-247AD
IRGP4068D-EPbF
G
C
E
C
G
C
E
C
PD - 97250C
Absolute Maximum Ratings
Parameter Max. Units
V
CES
Collector-to-Emitter Voltage 600 V
I
C
@ T
C
= 25°C Continuous Collector Current 96
I
C
@ T
C
= 100°C Continuous Collector Current 48
I
CM
Pulse Collector Current, V
GE
= 15V
144
I
LM
Clamped Inductive Load Current, V
GE
= 20V
192 A
I
F
@ T
C
= 160°C
Diode Continous Forward Current
8.0
I
FSM
Diode Non Repetitive Peak Surge Current @ T
J
= 25°C
175
I
FRM
@Tc = 100°C
Diode Repetitive Peak Forward Current at tp=10μs
100
V
GE
Continuous Gate-to-Emitter Voltage ±20 V
Transient Gate-to-Emitter Voltage ±30
P
D
@ T
C
= 25°C Maximum Power Dissipation 330 W
P
D
@ T
C
= 100°C Maximum Power Dissipation 170
T
J
Operating Junction and -55 to +175
T
STG
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter Min. Typ. Max. Units
R
θJC
(IGBT)
Thermal Resistance Junction-to-Case-(each IGBT) ––– ––– 0.45 °C/W
R
θJC
(Diode)
Thermal Resistance Junction-to-Case-(each Diode) ––– ––– 2.0
R
θCS
Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.24 –––
R
θJA
Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– ––– 40