Datasheet

IRGP4066DPbF/IRGP4066D-EPbF
2 www.irf.com
Notes:
V
CC
= 80% (V
CES
), V
GE
= 20V, L = 10μH, R
G
= 10Ω.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely.
R
θ
is measured at T
J
of approximately 90°C.
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
600 V
V
GE
= 0V, I
C
= 100μA
ΔV
(BR)CES
/ΔT
J
Temperature Coeff. of Breakdown Voltage
—0.30—V/°C
V
GE
= 0V, I
C
= 2.0mA (25°C-175°C)
1.70 2.10
I
C
= 75A, V
GE
= 15V, T
J
= 25°C
V
CE(on)
Collector-to-Emitter Saturation Voltage 2.0 V
I
C
= 75A, V
GE
= 15V, T
J
= 150°C
—2.1—
I
C
= 75A, V
GE
= 15V, T
J
= 175°C
V
GE(th)
Gate Threshold Voltage 4.0 6.5 V
V
CE
= V
GE
, I
C
= 2.1mA
ΔV
GE(th)
/ΔTJ
Threshold Voltage temp. coefficient -21 mV/°C
V
CE
= V
GE
, I
C
= 2.1mA (2C - 17C)
gfe Forward Transconductance 50 S
V
CE
= 50V, I
C
= 75A, PW = 60μs
I
CES
Collector-to-Emitter Leakage Current 1.0 100 μA
V
GE
= 0V, V
CE
= 600V
1040
V
GE
= 0V, V
CE
= 600V, T
J
= 175°C
V
FM
Diode Forward Voltage Drop 2.23 3.0 V
I
F
= 75A
—1.8—
I
F
= 75A, T
J
= 175°C
I
GES
Gate-to-Emitter Leakage Current ±200 nA
V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
Q
g
Total Gate Charge (turn-on) 150 225
I
C
= 75A
Q
ge
Gate-to-Emitter Charge (turn-on) 40 60 nC
V
GE
= 15V
Q
gc
Gate-to-Collector Charge (turn-on) 60 90
V
CC
= 400V
E
on
Turn-On Switching Loss 2465 3360
I
C
= 75A, V
CC
= 400V, V
GE
= 15V
E
off
Turn-Off Switching Loss 2155 3040 μJ
R
G
= 10Ω, L = 200μH, T
J
= 25°C
E
total
Total Switching Loss 4620 6400
Energy losses include tail & diode reverse recovery
t
d(on)
Turn-On delay time 50 70
I
C
= 75A, V
CC
= 400V, V
GE
= 15V
t
r
Rise time 70 90 ns
R
G
= 10Ω, L = 200μH, T
J
= 25°C
t
d(off)
Turn-Off delay time 200 225
t
f
Fall time 60 80
E
on
Turn-On Switching Loss 3870
I
C
= 75A, V
CC
= 400V, V
GE
=15V
E
off
Turn-Off Switching Loss 2815 μJ
R
G
=10Ω, L=200μH, T
J
= 175°C
E
total
Total Switching Loss 6685
Energy losses include tail & diode reverse recovery
t
d(on)
Turn-On delay time 50
I
C
= 75A, V
CC
= 400V, V
GE
= 15V
t
r
Rise time 70 ns
R
G
= 10Ω, L = 200μH
t
d(off)
Turn-Off delay time 240
T
J
= 175°C
t
f
Fall time 70
C
ies
Input Capacitance 4440 pF
V
GE
= 0V
C
oes
Output Capacitance 245
V
CC
= 30V
C
res
Reverse Transfer Capacitance 130 f = 1.0Mhz
T
J
= 175°C, I
C
= 300A
RBSOA Reverse Bias Safe Operating Area FULL SQUARE
V
CC
= 480V, Vp
600V
Rg = 10
Ω
, V
GE
= +20V to 0V
SCSOA Short Circuit Safe Operating Area 5 μs
V
CC
= 400V, Vp 600V
Rg = 10
Ω
, V
GE
= +15V to 0V
Erec Reverse Recovery Energy of the Diode 470 μJ
T
J
= 175°C
t
rr
Diode Reverse Recovery Time 155 ns
V
CC
= 400V, I
F
= 75A
I
rr
Peak Reverse Recovery Current 27 A
V
GE
= 15V, Rg = 10Ω, L = 60μH
Conditions