Datasheet

5 www.irf.com © 2013 International Rectifier March 15, 2013
IRGP4063DPbF/IRGP4063D-EPbF
Fig. 13 - Typ. Energy Loss vs. I
C
T
J
= 175°C; L = 200μH; V
CE
= 400V, R
G
= 10Ω; V
GE
= 15V
Fig. 14 - Typ. Switching Time vs. I
C
T
J
= 175°C; L = 200μH; V
CE
= 400V, R
G
= 10Ω; V
GE
= 15V
Fig. 15 - Typ. Energy Loss vs. R
G
T
J
= 175°C; L = 200μH; V
CE
= 400V, I
CE
= 48A; V
GE
= 15V
Fig. 16 - Typ. Switching Time vs. R
G
T
J
= 175°C; L = 200μH; V
CE
= 400V, I
CE
= 48A; V
GE
= 15V
Fig. 17 - Typ. Diode I
RR
vs. I
F
T
J
= 175°C
Fig. 18 - Typ. Diode I
RR
vs. R
G
T
J
= 175°C
0 20 40 60 80 100
I
C
(A)
10
100
1000
S
w
i
c
h
i
n
g
T
i
m
e
(
n
s
)
t
R
td
OFF
t
F
td
ON
0 25 50 75 100 125
Rg (Ω)
1000
1500
2000
2500
3000
3500
4000
4500
5000
E
n
e
r
g
y
(
μ
J
)
E
OFF
E
ON
0 25 50 75 100 125
R
G
(Ω)
10
100
1000
S
w
i
c
h
i
n
g
T
i
m
e
(
n
s
)
t
R
td
OFF
t
F
td
ON
0 20 40 60 80 100
I
F
(A)
0
5
10
15
20
25
30
35
40
45
I
R
R
(
A
)
R
G =
10
Ω
R
G =
22
Ω
R
G =
47
Ω
R
G =
100
Ω
0 25 50 75 100 125
R
G
(
Ω)
10
15
20
25
30
35
40
45
I
R
R
(
A
)
0 50 100 150
I
C
(A)
0
1000
2000
3000
4000
5000
6000
E
n
e
r
g
y
(
μ
J
)
E
OFF
E
ON