Datasheet

IRGP4063PbF/IRGP4063-EPbF
2 www.irf.com
Notes:
 V
CC
= 80% (V
CES
), V
GE
= 20V, L = 200μH, R
G
= 10Ω.
 This is only applied to TO-247AC package.
 Pulse width limited by max. junction temperature.
 Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely.
 Turn-on energy is measured using the same co-pak diode as IRGP4063DPbF.
 Calculated continuous current based on maximum allowable junction temperature.
Bond wire current limit is 80A. Note that current limitations arising from heating of
the device leads may occur with some lead mounting arrangements.
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Ref.Fig
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
600 — — V
V
GE
= 0V, I
C
= 150μA
CT6
ΔV
(BR)CES
/ΔT
J
Temperature Coeff. of Breakdown Voltage —0.30—V/°C
V
GE
= 0V, I
C
= 1mA (25°C-175°C) CT6
— 1.65 2.14
I
C
= 48A, V
GE
= 15V, T
J
= 25°C
5,6,7
V
CE(on)
Collector-to-Emitter Saturation Voltage — 2.0 — V
I
C
= 48A, V
GE
= 15V, T
J
= 150°C
8,9,10
—2.05—
I
C
= 48A, V
GE
= 15V, T
J
= 175°C
V
GE(th)
Gate Threshold Voltage 4.0 — 6.5 V
V
CE
= V
GE
, I
C
= 1.4mA
8,9
Δ
V
GE(th)
/
Δ
TJ
Threshold Voltage temp. coefficient — -21 — mV/°C
V
CE
= V
GE
, I
C
= 1.0mA (25°C - 175°C)
10,11
gfe Forward Transconductance — 32 — S
V
CE
= 50V, I
C
= 48A, PW = 80μs
I
CES
Collector-to-Emitter Leakage Current — 1.0 150 μA
V
GE
= 0V, V
CE
= 600V
— 450 1000
V
GE
= 0V, V
CE
= 600V, T
J
= 175°C
I
GES
Gate-to-Emitter Leakage Current — — ±100 nA
V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
Ref.Fig
Q
g
Total Gate Charge (turn-on) — 95 140
I
C
= 48A
18
Q
ge
Gate-to-Emitter Charge (turn-on) — 28 42 nC
V
GE
= 15V CT1
Q
gc
Gate-to-Collector Charge (turn-on) — 35 53
V
CC
= 400V
E
on
Turn-On Switching Loss
— 625 1141
I
C
= 48A, V
CC
= 400V, V
GE
= 15V CT4
E
off
Turn-Off Switching Loss — 1275 1481 μJ
R
G
=10Ω, L= 200μH, L
S
=150nH, T
J
= 25°C
E
total
Total Switching Loss — 1900 2622
Energy losses include tail & diode reverse recovery
t
d(on)
Turn-On delay time — 60 78
I
C
= 48A, V
CC
= 400V, V
GE
= 15V
CT4
t
r
Rise time — 40 56 ns
R
G
= 10
Ω
, L = 200μH, L
S
= 150nH, T
J
= 25°C
t
d(off)
Turn-Off delay time — 145 176
t
f
Fall time — 35 46
E
on
Turn-On Switching Loss
— 1625 —
I
C
= 48A, V
CC
= 400V, V
GE
=15V
12, 14
E
off
Turn-Off Switching Loss — 1585 — μJ
R
G
=10
Ω
, L=200μH, L
S
=150nH, T
J
= 175°C CT4
E
total
Total Switching Loss — 3210 —
Energy losses include tail & diode reverse recovery WF1, WF2
t
d(on)
Turn-On delay time — 55 —
I
C
= 48A, V
CC
= 400V, V
GE
= 15V 13, 15
t
r
Rise time — 45 — ns
R
G
= 10Ω, L = 200μH, L
S
= 150nH
CT4
t
d(off)
Turn-Off delay time — 165 —
T
J
= 175°C WF1
t
f
Fall time — 45 —
WF2
C
ies
Input Capacitance — 3025 — pF
V
GE
= 0V 17
C
oes
Output Capacitance — 245 —
V
CC
= 30V
C
res
Reverse Transfer Capacitance — 90 — f = 1.0Mhz
T
J
= 175°C, I
C
= 192A
4
RBSOA Reverse Bias Safe Operating Area FULL SQUARE
V
CC
= 480V, Vp =600V
CT2
Rg = 10Ω, V
GE
= +15V to 0V
SCSOA Short Circuit Safe Operating Area 5 — — μs
V
CC
= 400V, Vp =600V 16, CT3
Rg = 10Ω, V
GE
= +15V to 0V
WF3
Conditions