Datasheet

INSULATED GATE BIPOLAR TRANSISTOR
IRGP4063PbF
IRGP4063-EPbF
PD - 97404
1 www.irf.com
06/30/09
V
CES
= 600V
I
C
= 48A, T
C
= 100°C
t
SC
≥ 5μs, T
J(max)
= 175°C
V
CE(on)
typ. = 1.65V
Features
• Low V
CE (ON)
Trench IGBT Technology
• Low switching losses
• Maximum Junction temperature 175 °C
•5 μS short circuit SOA
• Square RBSOA
• 100% of the parts tested for I
LM

• Positive V
CE (ON)
Temperature co-efficient
• Tight parameter distribution
• Lead Free Package
Benefits
• High Efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to
Low V
CE (ON)
and Low Switching losses
• Rugged transient Performance for increased reliability
• Excellent Current sharing in parallel operation
• Low EMI
G
C
E
Gate Collector Emitter
TO-247AC
IRGP4063PbF
TO-247AD
IRGP4063-EPbF
G
C
E
C
G
C
E
C
E
C
G
n-channel
Absolute Maximum Ratings
Parameter Max. Units
V
CES
Collector-to-Emitter Voltage 600 V
I
C
@ T
C
= 25°C Continuous Collector Current
96
I
C
@ T
C
= 100°C Continuous Collector Current 48
I
CM
Pulse Collector Current, V
GE
= 15V
144 A
I
LM
Clamped Inductive Load Current, V
GE
= 20V
192 A
V
GE
Continuous Gate-to-Emitter Voltage ±20 V
Transient Gate-to-Emitter Voltage ±30
P
D
@ T
C
= 25°C Maximum Power Dissipation 330 W
P
D
@ T
C
= 100°C Maximum Power Dissipation 170
T
J
Operating Junction and -55 to +175
T
STG
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter Min. Typ. Max. Units
R
θJC
(IGBT)
Thermal Resistance Junction-to-Case-(each IGBT) ––– ––– 0.45 °C/W
R
θCS
Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.24 –––
R
θJA
Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– ––– 40