Datasheet

INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
E
G
n-channel
C
V
CES
= 600V
I
C
= 24A, T
C
= 100°C
t
SC
5μs, T
J(max)
= 175°C
V
CE(on)
typ. = 1.65V
Features
Low V
CE (ON)
Trench IGBT Technology
Low switching losses
Maximum Junction temperature 175 °C
•5 μS short circuit SOA
Square RBSOA
100% of the parts tested for I
LM
Positive V
CE (ON)
Temperature co-efficient
Ultra fast soft Recovery Co-Pak Diode
Tight parameter distribution
Lead Free Package
Benefits
High Efficiency in a wide range of applications
Suitable for a wide range of switching frequencies due to
Low V
CE (ON)
and Low Switching losses
Rugged transient Performance for increased reliability
Excellent Current sharing in parallel operation
Low EMI
G
C
E
Gate Collector Emitter
TO-247AC
IRGP4062DPbF
TO-220AB
IRGB4062DPbF
G
C
E
C
G
C
E
C
TO-247AD
IRGP4062D-EPbF
C
G
C
E
www.irf.com © 2013 International Rectifier July 17, 2013
1
IRGB4062DPbF
IRGP4062DPbF
IRGP4062D-EPbF
Absolute Maximum Ratings
Parameter Max. Units
V
CES
Collector-to-Emitter Voltage 600 V
I
C
@ T
C
= 25°C
Continuous Collector Current 48
I
C
@ T
C
= 100°C
Continuous Collector Current 24
I
CM
Pulse Collector Current, V
GE
= 15V 72
I
LM
Clamped Inductive Load Current, V
GE
= 20V 96 A
I
F
@ T
C
= 25°C
Diode Continous Forward Current 48
I
F
@ T
C
= 100°C
Diode Continous Forward Current 24
I
FM
Diode Maximum Forward Current
96
V
GE
Continuous Gate-to-Emitter Voltage ±20 V
Transient Gate-to-Emitter Voltage ±30
P
D
@ T
C
= 25°C
Maximum Power Dissipation 250 W
P
D
@ T
C
= 100°C
Maximum Power Dissipation 125
T
J
Operating Junction and -55 to +175
T
STG
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter Min. Typ. Max. Units
R
JC
(IGBT)
Thermal Resistance Junction-to-Case-(each IGBT) TO-220AB ––– ––– 0.60
R
JC
(Diode)
Thermal Resistance Junction-to-Case-(each Diode) TO-220AB ––– ––– 1.53
R
JC
(IGBT)
Thermal Resistance Junction-to-Case-(each IGBT) TO-247 ––– ––– 0.65 °C/W
R
JC
(Diode)
Thermal Resistance Junction-to-Case-(each Diode) TO-247 ––– ––– 1.62
R
CS
Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.50 –––
R
JA
Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– 80 –––

Summary of content (13 pages)