Datasheet

IRGP20B60PDPbF
4 www.irf.com
Fig. 8 - Typical V
CE
vs. V
GE
T
J
= 25°C
Fig. 9 - Typical V
CE
vs. V
GE
T
J
= 125°C
Fig. 12 - Typ. Switching Time vs. I
C
T
J
= 125°C; L = 200µH; V
CE
= 390V, R
G
= 10Ω; V
GE
= 15V.
Diode clamp used: 8ETH06 (See C.T.3)
Fig. 11 - Typ. Energy Loss vs. I
C
T
J
= 125°C; L = 200µH; V
CE
= 390V, R
G
= 10Ω; V
GE
= 15V.
Diode clamp used: 8ETH06 (See C.T.3)
Fig. 10 - Typ. Diode Forward Characteristics
tp = 80µs
0 5 10 15 20
V
GE
(V)
0
50
100
150
200
250
300
350
400
450
I
C
E
(
A
)
T
J
= 25°C
T
J
= 125°C
Fig. 7 - Typ. Transfer Characteristics
V
CE
= 50V; tp = 10µs
0 5 10 15 20
V
GE
(V)
0
1
2
3
4
5
6
7
8
9
10
V
C
E
(
V
)
I
CE
= 20A
I
CE
= 13A
I
CE
= 8.0A
0 5 10 15 20
V
GE
(V)
0
1
2
3
4
5
6
7
8
9
10
V
C
E
(
V
)
I
CE
= 20A
I
CE
= 13A
I
CE
= 8.0A
0 5 10 15 20 25
I
C
(A)
0
50
100
150
200
250
300
350
E
n
e
r
g
y
(
µ
J
)
E
OFF
E
ON
0 5 10 15 20 25
I
C
(A)
1
10
100
1000
S
w
i
c
h
i
n
g
T
i
m
e
(
n
s
)
t
R
td
OFF
t
F
td
ON
1
10
100
0.4 0.8 1.2 1.6 2.0 2.4
FM
F
Instantaneous For ward Current - I (A)
Forward Voltage Drop - V (V)
T = 150°C
T = 125°C
T = 25°C
J
J
J