Datasheet

WARP2 SERIES IGBT WITH
ULTRAFAST SOFT RECOVERY DIODE
IRGP20B60PDPbF
PD - 95558
Features
• NPT Technology, Positive Temperature Coefficient
• Lower V
CE
(SAT)
• Lower Parasitic Capacitances
• Minimal Tail Current
• HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode
• Tighter Distribution of Parameters
• Higher Reliability
Benefits
• Parallel Operation for Higher Current Applications
• Lower Conduction Losses and Switching Losses
• Higher Switching Frequency up to 150kHz
TO-247AC
E
G
n-channel
C
V
CES
= 600V
V
CE(on)
typ. = 2.05V
@ V
GE
= 15V I
C
= 13.0A
Equivalent MOSFET
Parameters 
R
CE(on)
typ. = 158mΩ
I
D
(FET equivalent) = 20A
Applications
• Telecom and Server SMPS
• PFC and ZVS SMPS Circuits
• Uninterruptable Power Supplies
• Consumer Electronics Power Supplies
G
C
E
SMPS IGBT
Absolute Maximum Ratings
Parameter Max. Units
V
CES
Collector-to-Emitter Voltage 600 V
I
C
@ T
C
= 25°C
Continuous Collector Current 40
I
C
@ T
C
= 100°C Continuous Collector Current 22
I
CM
Pulse Collector Current (Ref. Fig. C.T.4) 80
I
LM
Clamped Inductive Load Current
80 A
I
F
@ T
C
= 25°C
Diode Continous Forward Current 31
I
F
@ T
C
= 100°C Diode Continous Forward Current 12
I
FRM
Maximum Repetitive Forward Current
42
V
GE
Gate-to-Emitter Voltage ±20 V
P
D
@ T
C
= 25°C
Maximum Power Dissipation 220 W
P
D
@ T
C
= 100°C Maximum Power Dissipation 86
T
J
Operating Junction and -55 to +150
T
STG
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter Min. Typ. Max. Units
R
θJC
(IGBT) Thermal Resistance Junction-to-Case-(each IGBT) ––– ––– 0.58 °C/W
R
θ
JC
(Diode)
Thermal Resistance Junction-to-Case-(each Diode) ––– ––– 2.5
R
θCS
Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.24 –––
R
θ
JA
Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– ––– 40
Weight ––– 6 (0.21) ––– g (oz)
• Lead-Free
7/27/04