Datasheet

IRGB4064DPbF
6 www.irf.com
Fig. 20 - Typical Diode Q
RR
V
CC
= 400V; V
GE
= 15V; T
J
= 175°C
Fig. 19- Typical Diode I
RR
vs. di
F
/dt
V
CC
= 400V; V
GE
= 15V;
I
CE
= 10A; T
J
= 175°C
Fig. 24 - Typical Gate Charge vs. V
GE
I
CE
= 10A, L=600µH
Fig. 23- Typ. Capacitance vs. V
CE
V
GE
= 0V; f = 1MHz
Fig. 22- Typ. V
GE
vs Short Circuit Time
V
CC
=400V, T
C
=25°C
Fig. 21 - Typical Diode E
RR
vs. I
F
T
J
= 175°C
0 200 400 600 800 1000 1200
di
F
/dt (A/µs)
5
10
15
20
I
R
R
(
A
)
0 2 4 6 8 10 12 14 16 18 20 22
I
F
(A)
0
50
100
150
200
250
300
I
R
R
(
A
)
R
G =
10
Ω
R
G =
22
Ω
R
G =
47
Ω
R
G =
100
Ω
8 10121416
V
GE
(V)
0
2
4
6
8
10
12
14
16
T
i
m
e
(
µ
s
)
0
10
20
30
40
50
60
70
80
C
u
r
r
e
n
t
(
A
)
T
sc
I
sc
0 500 1000 1500
di
F
/dt (A/µs)
300
400
500
600
700
800
900
Q
R
R
(
n
C
)
10
Ω
22
Ω
47
Ω
100
Ω
20A
10A
5.0A
0 4 8 12162024
Q
G
, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
16
V
G
E
(
V
)
300V
400V
0 20 40 60 80 100
V
CE
(V)
1
10
100
1000
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Cies
Coes
Cres