Datasheet

IRGB4064DPbF
4 www.irf.com
Fig. 9 - Typical V
CE
vs. V
GE
T
J
= -40°C
Fig. 7 - Typ. IGBT Output Characteristics
T
J
= 175°C; tp = 80µs
Fig. 10 - Typical V
CE
vs. V
GE
T
J
= 25°C
Fig. 8 - Typ. Diode Forward Characteristics
tp = 80µs
Fig. 12 - Typ. Transfer Characteristics
V
CE
= 50V; tp = 10µs
Fig. 11 - Typical V
CE
vs. V
GE
T
J
= 175°C
0 5 10 15 20
V
GE
(V)
0
10
20
30
40
I
C
E
(
A
)
T
J
= 25°C
T
J
= 175°C
0246810
V
CE
(V)
0
10
20
30
40
I
C
E
(
A
)
V
GE
= 18V
V
GE
= 15V
V
GE
= 12V
V
GE
= 10V
V
GE
= 8.0V
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0
V
F
(V)
0
10
20
30
40
50
60
70
80
I
F
(
A
)
-40°C
25°C
175°C
5101520
V
GE
(V)
0
2
4
6
8
10
12
14
16
18
20
V
C
E
(
V
)
I
CE
= 5.0A
I
CE
= 10A
I
CE
= 20A
5101520
V
GE
(V)
0
2
4
6
8
10
12
14
16
18
20
V
C
E
(
V
)
I
CE
= 5.0A
I
CE
= 10A
I
CE
= 20A
5101520
V
GE
(V)
0
2
4
6
8
10
12
14
16
18
20
V
C
E
(
V
)
I
CE
= 5.0A
I
CE
= 10A
I
CE
= 20A