Datasheet

IRGB4064DPbF
2 www.irf.com
Notes:
V
CC
= 80% (V
CES
), V
GE
= 15V, L = 28 µH, R
G
= 22 Ω.
Pulse width limited by max. junction temperature.
R
θ
is measured at T
J
approximately 90°C
Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions Ref.Fig
V
(
BR
)
CES
Collector-to-Emitter Breakdown Voltage 600 V V
GE
= 0V, I
C
= 100µA
V
(BR)CES
/T
J
Temperature Coeff. of Breakdown Voltage
—0.47—V/°CV
GE
= 0V, I
C
= 500µA (-55°C-175°C)
1.6 1.91 I
C
= 10A, V
GE
= 15V, T
J
= 25°C
V
CE
(
on
)
Collector-to-Emitter Saturation Voltage 1.9 V I
C
= 10A, V
GE
= 15V, T
J
= 150°C 5,6,7,9,
—2.0— I
C
= 10A, V
GE
= 15V, T
J
= 175°C 10 ,11
V
GE
(
th
)
Gate Threshold Voltage 4.0 6.5 V V
CE
= V
GE
, I
C
= 275µA
V
GE(th)
/
TJ
Threshold Voltage temp. coefficient -11 mV/°C V
CE
= V
GE
, I
C
= 1.0mA (25°C - 175°C)
gfe Forward Transconductance 6.9 S V
CE
= 50V, I
C
= 10A, PW = 80µs
I
CES
Collector-to-Emitter Leakage Current 25 µA V
GE
= 0V, V
CE
= 600V
328 V
GE
= 0V, V
CE
= 600V, T
J
= 175°C 8
V
FM
Diode Forward Voltage Drop 2.5 3.1 V I
F
= 10A
—1.7— I
F
= 10A, T
J
= 175°C
I
GES
Gate-to-Emitter Leakage Current ±100 nA V
GE
= ±20V
Switchin
g
Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Ref.Fig
Q
g
Total Gate Charge (turn-on) 21 32 I
C
= 10A 24
Q
g
e
Gate-to-Emitter Charge (turn-on) 5.3 8.0 nC V
GE
= 15V CT1
Q
g
c
Gate-to-Collector Charge (turn-on) 8.9 13 V
CC
= 400V
E
on
Turn-On Switching Loss 29 71 I
C
= 10A, V
CC
= 400V, V
GE
= 15V
E
off
Turn-Off Switching Loss 200 308 µJ R
G
= 22, L = 1.0mH, T
J
= 25°C CT4
E
total
Total Switching Loss 229 339 Energy losses include tail & diode reverse recovery
t
d
(
on
)
Turn-On delay time 27 37 I
C
= 10A, V
CC
= 400V, V
GE
= 15V
t
r
Rise time 15 23 ns R
G
= 22, L = 1.0mH, T
J
= 25°C CT4
t
d
off
Turn-Off delay time 79 90
t
f
Fall time 21 30
E
on
Turn-On Switching Loss 99 I
C
= 10A, V
CC
= 400V, V
GE
= 15V 13,15
E
off
Turn-Off Switching Loss 316 µJ R
G
=22, L=1.0mH, T
J
= 175°C CT4
E
total
Total Switching Loss 415 Energy losses include tail & diode reverse recovery WF1,WF2
t
d
(
on
)
Turn-On delay time 27 I
C
= 10A, V
CC
= 400V, V
GE
= 15V 14,16
t
r
Rise time 16 ns R
G
= 22, L = 1.0mH, T
J
= 175°C CT4
t
d
off
Turn-Off delay time 98 WF1,WF2
t
f
Fall time 33
C
ies
Input Capacitance 594 pF V
GE
= 0V 22
C
oes
Output Capacitance 49 V
CC
= 30V
C
res
Reverse Transfer Capacitance 17 f = 1.0Mhz
T
J
= 175°C, I
C
= 40A 4
RBSOA Reverse Bias Safe Operating Area FULL SQUARE V
CC
= 480V, Vp =600V CT2
Rg = 22, V
GE
= +15V to 0V
SCSOA Short Circuit Safe Operating Area 5 µs V
CC
= 400V, Vp =600V 22, CT3
Rg = 22, V
GE
= +15V to 0V WF4
Erec Reverse Recovery Energy of the Diode 191 µJ T
J
= 175°C 17,18,19
t
rr
Diode Reverse Recovery Time 62 ns V
CC
= 400V, I
F
= 10A 20,21
I
rr
Peak Reverse Recovery Current 16 A V
GE
= 15V, Rg = 22, L=1.0mH WF3
CT6
9,10,11,12
Conditions