Datasheet

INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
IRGB4064DPbF
1 www.irf.com
11/28/06
V
CES
= 600V
I
C
= 10A, T
C
= 100°C
t
sc
> 5µs, T
jmax
= 175°C
V
CE(on) typ.
= 1.6V
TO-220AB
C
E
C
G
PD - 97113
GCE
Gate Collector Emitter
E
G
n-channel
C
Features
Low V
CE (on)
Trench IGBT Technology
Low Switching Losses
Maximum Junction temperature 175 °C
5µs SCSOA
Square RBSOA
100% of The Parts Tested for I
LM
Positive V
CE (on)
Temperature Coefficient.
Ultra Fast Soft Recovery Co-pak Diode
Tighter Distribution of Parameters
Lead-Free Package
Benefits
High Efficiency in a Wide Range of Applications
Suitable for a Wide Range of Switching Frequencies due
to Low V
CE (ON)
and Low Switching Losses
Rugged Transient Performance for Increased Reliability
Excellent Current Sharing in Parallel Operation
Low EMI
Absolute Maximum Ratings
Parameter Max. Units
V
CES
Collector-to-Emitter Breakdown Voltage 600 V
I
C
@ T
C
= 25°C Continuous Collector Current 20
I
C
@ T
C
= 100°C Continuous Collector Current 10
I
CM
Pulsed Collector Current 40
I
LM
Clamped Inductive Load Current c
40 A
I
F
@T
C
=25°C Diode Continuous Forward Current 20
I
F
@T
C
=100°C Diode Continuous Forward Current 10
I
FM
Diode Maximum Forward Current d
40
Continuous Gate-to-Emitter Voltage ±20 V
Transient Gate-to-Emitter Voltage ±30
P
D
@ T
C
=25° Maximum Power Dissipation 101 W
P
D
@ T
C
=100° Maximum Power Dissipation 50
T
J
Operating Junction and °C
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter Min. Typ. Max. Units
R
θJC
Junction-to-Case - IGBT e
––– ––– 1.49
R
θJC
Junction-to-Case - Diode e
––– ––– 3.66
R
θCS
Case-to-Sink, flat, greased surface ––– 0.50 –––
R
θJA
Junction-to-Ambient, typical socket mount e
––– ––– 62
Wt Weight 1.44
g
°C/W
V
GE
-55 to + 175
300 (0.063 in. (1.6mm) from case)

Summary of content (11 pages)