Datasheet

IRG7PSH73K10PbF
6 www.irf.com
Fig 20. Maximum Transient Thermal Impedance, Junction-to-Case
Fig. 18 - Typ. Capacitance vs. V
CE
V
GE
= 0V; f = 1MHz
Fig. 19- Typical Gate Charge vs. V
GE
I
CE
= 75A; L = 330μH
0 20 40 60 80 100
V
CE
(V)
100
1000
10000
100000
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Cies
Coes
Cres
1E-006 1E-005 0.0001 0.001 0.01 0.1
t
1
, Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W) τi (sec)
0.0309 0.000104
0.0520 0.000868
0.0471 0.003620
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
τ
τ
C
Ci τi/Ri
Ci= τi/Ri
0 100 200 300 400
Q
G
, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
16
V
G
E
(
V
)
400V
600V