Datasheet

IRG7PSH73K10PbF
2 www.irf.com
Notes:
 Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 195A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements. (Refer to AN-1140)
 V
CC
= 80% (V
CES
), V
GE
= 20V, L = 20μH, R
G
= 5.0Ω.
 Pulse width ≤ 400μs; duty cycle ≤ 2%.
 Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely.
 R
θ
is measured at T
J
of approximately 90°C.
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(
BR
)
CES
Collector-to-Emitter Breakdown Voltage 1200 — — V V
GE
= 0V, I
C
= 250μA
ΔV
(
BR
)
CES
/ΔT
J
Temperature Coeff. of Breakdown Voltage — 1.58 — V/°C V
GE
= 0V, I
C
= 5.0mA (25°C-175°C)
—2.02.3 I
C
= 75A, V
GE
= 15V, T
J
= 25°C
V
CE
(
on
)
Collector-to-Emitter Saturation Voltage — 2.50 — V I
C
= 75A, V
GE
= 15V, T
J
= 150°C
—2.60— I
C
= 75A, V
GE
= 15V, T
J
= 175°C
V
GE
(
th
)
Gate Threshold Voltage 5.0 — 7.5 V V
CE
= V
GE
, I
C
= 3.5mA
ΔV
GE
(
th
)
/ΔTJ Threshold Voltage temp. coefficient — -18 — mV/°C V
CE
= V
GE
, I
C
= 3.5mA (25°C - 175°C)
gfe Forward Transconductance — 53 — S V
CE
= 50V, I
C
= 75A, PW = 80μs
I
CES
Collector-to-Emitter Leakage Current — 1.0 25 V
GE
= 0V, V
CE
= 1200V, T
J
= 25°C
— 2340 — V
GE
= 0V, V
CE
= 1200V, T
J
= 175°C
I
GES
Gate-to-Emitter Leakage Current — — ±400 nA V
GE
= ±30V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
Q
g
Total Gate Charge (turn-on) — 360 540 I
C
= 75A
Q
g
e
Gate-to-Emitter Charge (turn-on) — 87 130 nC V
GE
= 15V
Q
g
c
Gate-to-Collector Charge (turn-on) — 180 270 V
CC
= 600V
E
on
Turn-On Switching Loss — 7.7 8.7 I
C
= 75A, V
CC
= 600V, V
GE
= 15V
E
off
Turn-Off Switching Loss — 4.6 5.6 mJ R
G
= 4.7Ω, L = 200μH, T
J
= 25°C
E
total
Total Switching Loss — 12.3 14.3 Energy losses include tail & diode reverse recovery
t
d
(
on
)
Turn-On delay time — 63 81 I
C
= 75A, V
CC
= 600V, V
GE
= 15V
t
r
Rise time — 118 138 ns R
G
= 4.7Ω, L = 200μH, T
J
= 25°C
t
d
(
off
)
Turn-Off delay time — 267 291
t
f
Fall time — 114 134
E
on
Turn-On Switching Loss — 11 — I
C
= 75A, V
CC
= 600V, V
GE
=15V
E
off
Turn-Off Switching Loss — 7.4 — mJ R
G
=4.7Ω, L=200μH, T
J
= 175°C
E
total
Total Switching Loss — 18.4 — Energy losses include tail & diode reverse recovery
t
d
(
on
)
Turn-On delay time — 62 — I
C
= 75A, V
CC
= 600V, V
GE
=15V
t
r
Rise time — 110 — ns R
G
= 4.7Ω, L = 200μH
t
d
(
off
)
Turn-Off delay time — 330 — T
J
= 175°C
t
f
Fall time — 237 —
C
ies
Input Capacitance — 9450 — pF V
GE
= 0V
C
oes
Output Capacitance — 340 — V
CC
= 30V
C
res
Reverse Transfer Capacitance — 230 — f = 1.0Mhz
I
C
= 300A
RBSOA Reverse Bias Safe Operating Area FULL SQUARE V
CC
= 960V, Vp =1200V
Rg = 4.7Ω, V
GE
= +20V to 0V, T
J
=175°C
SCSOA Short Circuit Safe Operating Area 10 — — μsV
CC
= 600V, Vp =1200V ,T
J
= 150°C
Rg = 4.7Ω, V
GE
= +15V to 0V
Conditions
μA