Datasheet

INSULATED GATE BIPOLAR TRANSISTOR
IRG7PSH73K10PbF
1 www.irf.com
9/8/10
V
CES
= 1200V
I
C(Nominal)
= 75A
t
SC
≥ 10μs, T
J(max)
=175°C
V
CE(on)
typ. = 2.0V
Features
• Low V
CE (ON)
Trench IGBT Technology
• Low Switching Losses
• Maximum Junction Temperature 175 °C
• 10 μS short Circuit SOA
• Square RBSOA
• 100% of The Parts Tested for I
LM
• Positive V
CE (ON)
Temperature Coefficient
• Tight Parameter Distribution
• Lead Free Package
Benefits
• High Efficiency in a Wide Range of Applications
• Suitable for a Wide Range of Switching Frequencies due to
Low V
CE (ON)
and Low Switching Losses
• Rugged Transient Performance for Increased Reliability
• Excellent Current Sharing in Parallel Operation
E
C
G
n-channel
PD - 97406A
GC E
G ate Collector Em itter
Super-247
G
C
E
C
Absolute Maximum Ratings
Parameter Max. Units
V
CES
Collector-to-Emitter Voltage 1200 V
I
C
@ T
C
= 25°C
Continuous Collector Current
220
I
C
@ T
C
= 100°C
Continuous Collector Current 130
I
NOMINAL
Nominal Current 75
I
CM
Pulse Collector Current, V
GE
=15V 225
I
LM
Clamped Inductive Load Current, V
GE
=20V 300
V
GE
Continuous Gate-to-Emitter Voltage ±30
V
P
D
@ T
C
= 25°C
Maximum Power Dissipation 1150
P
D
@ T
C
= 100°C
Maximum Power Dissipation 580
T
J
Operating Junction and -55 to +175
T
STG
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter Min. Typ. Max. Units
R
θ
JC
(IGBT) Thermal Resistance Junction-to-Case-(each IGBT)
––– ––– 0.13
R
θ
CS
Thermal Resistance, Case-to-Sink (flat, greased surface)
––– 0.24 –––
R
θ
JA
Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– 40 –––
A
W
°C/W