Datasheet
2 www.irf.com
IRG7PH50UPbF/IRG7PH50U-EP
Notes:
V
CC
= 80% (V
CES
), V
GE
= 20V, L = 200µH, R
G
= 5.0Ω.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely.
R
θ
is measured at T
J
of approximately 90°C.
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
1200 — — V
V
GE
= 0V, I
C
= 100µA
∆V
(BR)CES
/∆T
J
Temperature Coeff. of Breakdown Voltage
—1.0—V/°C
V
GE
= 0V, I
C
= 1mA (25°C-150°C)
—1.72.0
I
C
= 50A, V
GE
= 15V, T
J
= 25°C
V
CE(on)
Collector-to-Emitter Saturation Voltage — 2.0 — V
I
C
= 50A, V
GE
= 15V, T
J
= 150°C
—2.1—
I
C
= 50A, V
GE
= 15V, T
J
= 175°C
V
GE(th)
Gate Threshold Voltage 3.0 — 6.0 V
V
CE
= V
GE
, I
C
= 2.0mA
∆V
GE(th)
/∆TJ
Threshold Voltage temp. coefficient — -17 — mV/°C
V
CE
= V
GE
, I
C
= 1mA (25°C - 175°C)
gfe Forward Transconductance — 55 — S
V
CE
= 50V, I
C
= 50A, PW = 80µs
I
CES
Collector-to-Emitter Leakage Current — 2.0 100
V
GE
= 0V, V
CE
= 1200V
—1700—
V
GE
= 0V, V
CE
= 1200V, T
J
= 175°C
I
GES
Gate-to-Emitter Leakage Current — — ±200 nA
V
GE
= ±30V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
Q
g
Total Gate Charge (turn-on) — 290 440
I
C
= 50A
Q
ge
Gate-to-Emitter Charge (turn-on) — 40 60 nC
V
GE
= 15V
Q
gc
Gate-to-Collector Charge (turn-on) — 110 170
V
CC
= 600V
E
on
Turn-On Switching Loss — 3600 4600
I
C
= 50A, V
CC
= 600V, V
GE
= 15V
E
off
Turn-Off Switching Loss — 2200 3200 µJ
R
G
= 5.0Ω, L = 200µH,T
J
= 25°C
E
total
Total Switching Loss — 5800 7800 Energy losses include tail & diode reverse recovery
t
d(on)
Turn-On delay time — 35 55 Diode clamp the same as IRG7PH50UDPbF
t
r
Rise time — 40 60 ns
t
d(off)
Turn-Off delay time — 430 500
t
f
Fall time — 45 65
E
on
Turn-On Switching Loss — 5600 —
I
C
= 50A, V
CC
= 600V, V
GE
=15V
E
off
Turn-Off Switching Loss — 3900 — µJ
R
G
=5.0Ω, L=200µH, T
J
= 175°C
E
total
Total Switching Loss — 9500 — Energy losses include tail & diode reverse recovery
t
d(on)
Turn-On delay time — 30 — Diode clamp the same as IRG7PH50UDPbF
t
r
Rise time — 45 — ns
t
d(off)
Turn-Off delay time — 500 —
t
f
Fall time — 210 —
C
ies
Input Capacitance — 6000 — pF
V
GE
= 0V
C
oes
Output Capacitance — 190 —
V
CC
= 30V
C
res
Reverse Transfer Capacitance — 130 — f = 1.0Mhz
I
C
= 200A
RBSOA Reverse Bias Safe Operating Area FULL SQUARE
V
CC
= 960V, Vp =1200V
Rg = 5.0Ω, V
GE
= +20V to 0V, T
J
=175°C
Conditions
µA