Datasheet

2 www.irf.com
IRG7PH46UPbF/IRG7PH46U-EP
Notes:
 V
CC
= 80% (V
CES
), V
GE
= 20V, L = 25μH, R
G
= 50Ω
 Pulse width ≤ 400μs; duty cycle ≤ 2%.
 Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely.
 R
θ
is measured at T
J
of approximately 90°C.
 Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 117A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements.
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
1200 — — V
V
GE
= 0V, I
C
= 100μA
ΔV
(BR)CES
/ΔT
J
Temperature Coeff. of Breakdown Voltage — 1.2 — V/°C
V
GE
= 0V, I
C
= 1mA (25°C-150°C)
—1.72.0
I
C
= 40A, V
GE
= 15V, T
J
= 25°C
V
CE(on)
Collector-to-Emitter Saturation Voltage — 2.0 — V
I
C
= 40A, V
GE
= 15V, T
J
= 150°C
—2.1—
I
C
= 40A, V
GE
= 15V, T
J
= 175°C
V
GE(th)
Gate Threshold Voltage 3.0 — 6.0 V
V
CE
= V
GE
, I
C
= 1.6mA
ΔV
GE(th)
/ΔTJ
Threshold Voltage temp. coefficient — -15 — mV/°C
V
CE
= V
GE
, I
C
= 1.6mA (25°C - 175°C)
gfe Forward Transconductance — 60 — S
V
CE
= 50V, I
C
= 40A, PW = 20μs
I
CES
Collector-to-Emitter Leakage Current — 1 100
V
GE
= 0V, V
CE
= 1200V
—1170—
V
GE
= 0V, V
CE
= 1200V, T
J
= 175°C
I
GES
Gate-to-Emitter Leakage Current — — ±200 nA
V
GE
= ±30V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
Q
g
Total Gate Charge (turn-on) — 220 320
I
C
= 40A
Q
ge
Gate-to-Emitter Charge (turn-on) — 30 50 nC
V
GE
= 15V
Q
gc
Gate-to-Collector Charge (turn-on) — 85 130
V
CC
= 600V
E
on
Turn-On Switching Loss — 2560 3460
I
C
= 40A, V
CC
= 600V, V
GE
= 15V
E
off
Turn-Off Switching Loss — 1780 2660 μJ
R
G
= 10Ω, L = 200μH,T
J
= 25°C
E
total
Total Switching Loss — 4340 6120 Energy losses include tail & diode reverse recovery
t
d(on)
Turn-On delay time — 45 65 Diode clamp the same as IRG7PH46UDPbF
t
r
Rise time — 40 55 ns
t
d(off)
Turn-Off delay time — 410 445
t
f
Fall time — 45 65
E
on
Turn-On Switching Loss — 3950 —
I
C
= 40A, V
CC
= 600V, V
GE
=15V
E
off
Turn-Off Switching Loss — 3020 — μJ
R
G
=10Ω, L=200μH, T
J
= 175°C
E
total
Total Switching Loss — 6970 — Energy losses include tail & diode reverse recovery
t
d(on)
Turn-On delay time — 40 — Diode clamp the same as IRG7PH46UDPbF
t
r
Rise time — 40 — ns
t
d(off)
Turn-Off delay time — 480 —
t
f
Fall time — 220 —
C
ies
Input Capacitance — 4820 — pF
V
GE
= 0V
C
oes
Output Capacitance — 150 —
V
CC
= 30V
C
res
Reverse Transfer Capacitance — 110 — f = 1.0Mhz
I
C
= 160A
RBSOA Reverse Bias Safe Operating Area FULL SQUARE
V
CC
= 960V, Vp =1200V
Rg = 10
Ω
, V
GE
= +20V to 0V, T
J
=175°C
Conditions
μA