Datasheet

IRG7PH46UDPbF/IRG7PH46UD-EP
www.irf.com © 2013 International Rectifier July 17, 20137
Fig. 22 - Typ. Capacitance vs. V
CE
V
GE
= 0V; f = 1MHz
Fig. 23 - Typical Gate Charge vs. V
GE
I
CE
= 40A; L = 2400H
Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
Fig. 25. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
0 100 200 300 400 500 600
V
CE
(V)
10
100
1000
10000
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Cies
Coes
Cres
0 40 80 120 160 200 240
Q
G
, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
16
V
G
E
,
G
a
t
e
-
t
o
-
E
m
i
t
t
e
r
V
o
l
t
a
g
e
(
V
)
V
CES
= 600V
V
CES
= 400V
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t
1
, Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc

J

J

1

1

2

2

3

3
R
1
R
1
R
2
R
2
R
3
R
3
Ci iRi
Ci= iRi


C

4

4
R
4
R
4
Ri (°C/W) i (sec)
0.01330 0.000031
0.08573 0.000147
0.12712 0.002625
0.09903 0.012121
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t
1
, Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc

J

J

1

1

2

2

3

3
R
1
R
1
R
2
R
2
R
3
R
3
Ci iRi
Ci= iRi


C

4

4
R
4
R
4
Ri (°C/W) i (sec)
0.007488 0.000016
0.235126 0.00057
0.280054 0.00409
0.136283 0.022342