Datasheet

IRG7PH46UDPbF/IRG7PH46UD-EP
www.irf.com © 2013 International Rectifier July 17, 2013
2
Notes:
 V
CC
= 80% (V
CES
), V
GE
= 20V, L = 200μH, R
G
= 10.
 Pulse width limited by max. junction temperature.
 Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely.
 R

is measured at T
J
of approximately 90°C.
 Values influenced by parasitic L and C of the test circuit.
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
1200 — — V
V
GE
= 0V, I
C
= 100μA
V
(BR)CES
/T
J
Temperature Coeff. of Breakdown Voltage — 1.2 — V/°C
V
GE
= 0V, I
C
= 1.0mA (25°C-150°C)
V
CE(on)
Collector-to-Emitter Saturation Voltage — 1.7 2.0
I
C
= 40A, V
GE
= 15V, T
J
= 25°C
—2.0— V
I
C
= 40A, V
GE
= 15V, T
J
= 150°C
V
GE(th)
Gate Threshold Voltage 3.0 — 6.0 V
V
CE
= V
GE
, I
C
= 1.6mA

V
GE(th)
/

TJ
Threshold Voltage temp. coefficient — -13 — mV/°C
V
CE
= V
GE
, I
C
= 1.6mA (25°C - 150°C)
gfe Forward Transconductance — 50 — S
V
CE
= 50V, I
C
= 40A, PW = 20μs
I
CES
Collector-to-Emitter Leakage Current — 1.5 100 μA
V
GE
= 0V, V
CE
= 1200V
—2.0—mA
V
GE
= 0V, V
CE
= 1200V, T
J
= 150°C
V
FM
Diode Forward Voltage Drop — 3.1 4.8 V
I
F
= 40A
—3.0—
I
F
= 40A, T
J
= 150°C
I
GES
Gate-to-Emitter Leakage Current — — ±200 nA
V
GE
= ±30V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
Q
g
Total Gate Charge (turn-on) — 220 320
I
C
= 40A
Q
ge
Gate-to-Emitter Charge (turn-on) — 30 50 nC
V
GE
= 15V
Q
gc
Gate-to-Collector Charge (turn-on) — 85 130
V
CC
= 600V
E
on
Turn-On Switching Loss — 2610 3515
I
C
= 40A, V
CC
= 600V, V
GE
= 15V
E
off
Turn-Off Switching Loss — 1845 2725 μJ
R
G
= 10, L = 200μH,T
J
= 25°C
E
total
Total Switching Loss — 4455 6240
Energy losses include tail & diode reverse recovery
t
d(on)
Turn-On delay time — 45 60
t
r
Rise time —4060ns
t
d(off)
Turn-Off delay time — 410 450
t
f
Fall time — 45 60
E
on
Turn-On Switching Loss — 3790 —
I
C
= 40A, V
CC
= 600V, V
GE
=15V
E
off
Turn-Off Switching Loss — 2905 — μJ
R
G
=10, L=200μH, T
J
= 150°C
E
total
Total Switching Loss — 6695 —
Energy losses include tail & diode reverse recovery
t
d(on)
Turn-On delay time — 40 —
t
r
Rise time — 40 — ns
t
d(off)
Turn-Off delay time — 480 —
t
f
Fall time — 200 —
C
ies
Input Capacitance — 4820 — pF
V
GE
= 0V
C
oes
Output Capacitance — 150 —
V
CC
= 30V
C
res
Reverse Transfer Capacitance — 110 — f = 1.0Mhz
T
J
= 150°C, I
C
= 160A
RBSOA Reverse Bias Safe Operating Area FULL SQUARE
V
CC
= 960V, Vp 1200V
Rg = 10

, V
GE
= +20V to 0V
Erec Reverse Recovery Energy of the Diode — 1130 — μJ
T
J
= 150°C
t
rr
Diode Reverse Recovery Time — 140 — ns
V
CC
= 600V, I
F
= 40A
I
rr
Peak Reverse Recovery Current — 40 — A
Rg = 10

, L =1.0mH
Conditions