Datasheet

INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
E
G
n-channel
C
V
CES
= 1200V
I
NOMINAL
= 40A
T
J(max)
= 150°C
V
CE(on)
typ. = 1.7V
Features
Low V
CE (ON)
trench IGBT technology
Low switching losses
Square RBSOA
100% of the parts tested for I
LM
Positive V
CE (ON)
temperature co-efficient
Ultra fast soft recovery co-pak diode
Tight parameter distribution
Lead-Free
Benefits
High efficiency in a wide range of applications
Suitable for a wide range of switching frequencies due to
low V
CE (ON)
and low switching losses
Rugged transient performance for increased reliability
Excellent current sharing in parallel operation
Applications
U.P.S.
Welding
Solar Inverter
Induction Heating
G
C
E
Gate Collector Emitter
TO-247AC
IRG7PH46UDPbF
TO-247AD
IRG7PH46UD-EP
G
C
E
C
G
C
E
C
Absolute Maximum Ratings
Parameter Max. Units
V
CES
Collector-to-Emitter Voltage 1200 V
I
C
@ T
C
= 25°C
Continuous Collector Current (Silicon Limited) 108
I
C
@ T
C
= 100°C
Continuous Collector Current (Silicon Limited) 57
I
NOMINAL
Nominal Current 40
I
CM
Pulse Collector Current, V
GE
= 20V 160 A
I
LM
Clamped Inductive Load Current, V
GE
= 20V 160
I
F
@ T
C
= 25°C
Diode Continous Forward Current 108
I
F
@ T
C
= 100°C
Diode Continous Forward Current 57
I
FM
Diode Maximum Forward Current
160
V
GE
Continuous Gate-to-Emitter Voltage ±30 V
P
D
@ T
C
= 25°C
Maximum Power Dissipation 390 W
P
D
@ T
C
= 100°C
Maximum Power Dissipation 156
T
J
Operating Junction and -55 to +150
T
STG
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter Min. Typ. Max. Units
R
JC
(IGBT)
Thermal Resistance Junction-to-Case-(each IGBT)
––– ––– 0.32
R
JC
(Diode)
Thermal Resistance Junction-to-Case-(each Diode)
––– ––– 0.66 °C/W
R
CS
Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.24 –––
R
JA
Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– 40 –––
IRG7PH46UDPbF
IRG7PH46UD-EP
1
www.irf.com © 2013 International Rectifier July 17, 2013

Summary of content (11 pages)