Datasheet

IRG7PH42UDPbF/IRG7PH42UD-EP
2 www.irf.com
Notes:
 V
CC
= 80% (V
CES
), V
GE
= 20V, L = 22µH, R
G
= 10Ω.
 Pulse width limited by max. junction temperature.
 Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely.
 R
θ
is measured at T
J
of approximately 90°C.
 Calculated continuous current based on maximum allowable junction temperature.
Bond wire current limit is 78A. Note that current limitations arising from heating of
the device leads may occur with some lead mounting arrangements.
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
1200 — — V
V
GE
= 0V, I
C
= 100µA
∆V
(BR)CES
/∆T
J
Temperature Coeff. of Breakdown Voltage —0.18—V/°C
V
GE
= 0V, I
C
= 2.0mA (25°C-150°C)
V
CE(on)
Collector-to-Emitter Saturation Voltage — 1.7 2.0
I
C
= 30A, V
GE
= 15V, T
J
= 25°C
—2.1— V
I
C
= 30A, V
GE
= 15V, T
J
= 150°C
V
GE(th)
Gate Threshold Voltage 3.0 — 6.0 V
V
CE
= V
GE
, I
C
= 1.0mA
∆V
GE(th)
/∆TJ
Threshold Voltage temp. coefficient — -14 — mV/°C
V
CE
= V
GE
, I
C
= 1.0mA (25°C - 150°C)
gfe Forward Transconductance — 32 — S
V
CE
= 50V, I
C
= 30A, PW = 80µs
I
CES
Collector-to-Emitter Leakage Current — 4.4 150 µA
V
GE
= 0V, V
CE
= 1200V
—1200—
V
GE
= 0V, V
CE
= 1200V, T
J
= 150°C
V
FM
Diode Forward Voltage Drop — 2.0 2.4 V
I
F
= 30A
—2.2—
I
F
= 30A, T
J
= 150°C
I
GES
Gate-to-Emitter Leakage Current — — ±100 nA
V
GE
= ±30V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
Q
g
Total Gate Charge (turn-on) — 157 236
I
C
= 30A
Q
ge
Gate-to-Emitter Charge (turn-on) — 21 32 nC
V
GE
= 15V
Q
gc
Gate-to-Collector Charge (turn-on) — 69 104
V
CC
= 600V
E
on
Turn-On Switching Loss — 2105 2374
I
C
= 30A, V
CC
= 600V, V
GE
= 15V
E
off
Turn-Off Switching Loss — 1182 1424 µJ
R
G
= 10
Ω
, L = 200µH,T
J
= 25°C
E
total
Total Switching Loss — 3287 3798
Energy losses include tail & diode reverse recovery
t
d(on)
Turn-On delay time — 25 34
t
r
Rise time —3241ns
t
d(off)
Turn-Off delay time — 229 271
t
f
Fall time — 63 86
E
on
Turn-On Switching Loss — 2978 —
I
C
= 30A, V
CC
= 600V, V
GE
=15V
E
off
Turn-Off Switching Loss — 1968 — µJ
R
G
=10
Ω
, L=200µH, T
J
= 150°C
E
total
Total Switching Loss — 4946 —
Energy losses include tail & diode reverse recovery
t
d(on)
Turn-On delay time — 19 —
t
r
Rise time — 32 — ns
t
d(off)
Turn-Off delay time — 290 —
t
f
Fall time — 154 —
C
ies
Input Capacitance — 3338 — pF
V
GE
= 0V
C
oes
Output Capacitance — 124 —
V
CC
= 30V
C
res
Reverse Transfer Capacitance — 75 — f = 1.0Mhz
T
J
= 150°C, I
C
= 120A
RBSOA Reverse Bias Safe Operating Area FULL SQUARE
V
CC
= 960V, Vp =1200V
Rg = 10
Ω
, V
GE
= +20V to 0V
Erec Reverse Recovery Energy of the Diode — 1475 — µJ
T
J
= 150°C
t
rr
Diode Reverse Recovery Time — 153 — ns
V
CC
= 600V, I
F
= 30A
I
rr
Peak Reverse Recovery Current — 34 — A
R
g
= 10
Ω
, L =1.0mH
Conditions