Datasheet

IRG7PH35UPbF/IRG7PH35U-EP
6 www.irf.com
Fig. 18 - Typical Gate Charge vs. V
GE
I
CE
= 20A; L = 2.4mH
Fig 20. Maximum Transient Thermal Impedance, Junction-to-Case
1E-006 1E-005 0.0001 0.001 0.01 0.1
t
1
, Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
Ci i/Ri
Ci= τi/Ri
τ
τ
C
τ
4
τ
4
R
4
R
4
Ri (°C/W) τi (sec)
0.017 0.000013
0.218 0.000141
0.299 0.002184
0.177 0.013107
Fig. 19 - Typical Gate Threshold Voltage
(Normalized) vs. Junction Temperature
0 20406080100
Q
G
, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
16
V
G
E
,
G
a
t
e
-
t
o
-
E
m
i
t
t
e
r
V
o
l
t
a
g
e
(
V
)
V
CES
= 600V
V
CES
= 400V
25 50 75 100 125 150 175
T
J
, Temperature (°C)
0.4
0.6
0.8
1.0
V
G
E
(
t
h
)
,
G
a
t
e
T
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
N
o
r
m
a
l
i
z
e
d
)
I
C
= 600μA