Datasheet

IRG7PH35UPbF
IRG7PH35U-EP
1 www.irf.com
3/26/10
GC E
Gate Collector Emitter
TO-247AC
IRG7PH35UPbF
TO-247AD
IRG7PH35U-EP
G
C
E
C
G
C
E
C
V
CES
= 1200V
I
NOMINAL
= 20A
T
J(max)
= 175°C
V
CE(on)
typ. = 1.9V
PD - 97479
E
C
G
n-channel
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Low V
CE (ON)
trench IGBT technology
• Low switching losses
• Maximum junction temperature 175 °C
• Square RBSOA
• 100% of the parts tested for I
LM
• Positive V
CE (ON)
temperature co-efficient
• Tight parameter distribution
• Lead -Free
Benefits
• High efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to
low V
CE (ON)
and low switching losses
• Rugged transient performance for increased reliability
• Excellent current sharing in parallel operation
Applications
• U.P.S
• Welding
• Solar inverter
• Induction heating
Absolute Maximum Ratin
g
s
Parameter Max. Units
V
CES
Collector-to-Emitter Voltage 1200 V
I
C
@ T
C
= 25°C
Continuous Collector Current 55
I
C
@ T
C
= 100°C
Continuous Collector Current 35
I
NOMINAL
Nominal Current 20
I
CM
Pulse Collector Current, V
GE
=15V
60
I
LM
Clamped Inductive Load Current, V
GE
=20V
80
V
GE
Continuous Gate-to-Emitter Voltage ±30 V
P
D
@ T
C
= 25°C
Maximum Power Dissipation 210
P
D
@ T
C
= 100°C
Maximum Power Dissipation 105
T
J
Operating Junction and -55 to +175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter Min. Typ. Max. Units
R
θ
JC
(IGBT) Thermal Resistance Junction-to-Case-(each IGBT) ––– ––– 0.70
R
θ
CS
Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.24 –––
R
θ
JA
Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– 40 –––
°C/W
A
W
°C