Datasheet

IRG7PH35UDPbF/IRG7PH35UD-EP
6 www.irf.com
Fig. 20 - Typ. Diode I
RR
vs. di
F
/dt
V
CC
= 600V; V
GE
= 15V; I
F
= 20A; T
J
= 150°C
Fig. 21 - Typ. Diode Q
RR
vs. di
F
/dt
V
CC
= 600V; V
GE
= 15V; T
J
= 150°C
Fig. 18 - Typ. Diode I
RR
vs. I
F
T
J
= 150°C
Fig. 19 - Typ. Diode I
RR
vs. R
G
T
J
= 150°C
Fig. 22 - Typ. Diode E
RR
vs. I
F
T
J
= 150°C
10 15 20 25 30 35 40
I
F
(A)
10
20
30
40
50
60
I
R
R
(
A
)
R
G =
5.0Ω
R
G =
10Ω
R
G =
100Ω
R
G =
47Ω
0 200 400 600 800 10001200140016001800
di
F
/dt (A/µs)
0
1000
2000
3000
4000
5000
6000
Q
R
R
(
µ
C
)
5.0Ω
10Ω
100Ω
47Ω
20A
40A
10A
10 15 20 25 30 35 40
I
F
(A)
0
500
1000
1500
2000
E
n
e
r
g
y
(
µ
J
)
R
G
= 5.0
Ω
R
G
= 10
Ω
R
G
=
47Ω
R
G
=
100Ω
Fig. 23 - Typical Gate Threshold Voltage
(Normalized) vs. Junction Temperature
200 400 600 800 1000 1200 1400 1600
di
F
/dt (A/µs)
20
25
30
35
40
45
50
55
I
R
R
(
A
)
0 20 40 60 80 100
R
G
(Ω)
20
25
30
35
40
45
50
I
R
R
(
A
)
25 50 75 100 125 150 175
T
J
, Temperature (°C)
1.0
2.0
3.0
4.0
5.0
V
G
E
(
t
h
)
,
G
a
t
e
T
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
N
o
r
m
a
l
i
z
e
d
)
I
C
= 600µA