Datasheet

IRG7PH35UDPbF/IRG7PH35UD-EP
www.irf.com 3
Fig. 2 - Maximum DC Collector Current vs.
Case Temperature
Fig. 3- Power Dissipation vs. Case
Temperature
Fig. 4 - Forward SOA
T
C
= 25°C, T
J
≤ 150°C; V
GE
=15V
Fig. 5 - Reverse Bias SOA
T
J
= 150°C; V
GE
= 20V
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
10 100 1000 10000
V
CE
(V)
1
10
100
1000
I
C
(
A
)
1 10 100 1000 10000
V
CE
(V)
0.01
0.1
1
10
100
1000
I
C
(
A
)
10µsec
100µsec
Tc = 25°C
Tj = 150°C
Single Pulse
DC
1msec
0 20 40 60 80 100 120 140 160
T
C
(°C)
0
50
100
150
200
P
t
o
t
(
W
)
25 50 75 100 125 150
T
C
(°C)
0
10
20
30
40
50
60
I
C
(
A
)
0.1 1 10 100
f , Frequency ( kHz )
0
5
10
15
20
25
30
35
40
45
L
o
a
d
C
u
r
r
e
n
t
(
A
)
For both:
Duty cycle : 50%
Tj = 150°C
Tc = 100°C
Gate drive as specified
Power Dissipation = 70W
I
Square Wave:
V
CC
Diode as specified