Datasheet

IRG7PH35UDPbF/IRG7PH35UD-EP
2 www.irf.com
Notes:
 V
CC
= 80% (V
CES
), V
GE
= 20V, R
G
= 50Ω.
 Pulse width limited by max. junction temperature.
 Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely.
 R
θ
is measured at T
J
of approximately 90°C.
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
1200 — — V
V
GE
= 0V, I
C
= 250µA
∆V
(BR)CES
/∆T
J
Temperature Coeff. of Breakdown Voltage —1.2—V/°C
V
GE
= 0V, I
C
= 1mA (25°C-150°C)
V
CE(on)
Collector-to-Emitter Saturation Voltage — 1.9 2.2 V
I
C
= 20A, V
GE
= 15V, T
J
= 25°C
—2.3—
I
C
= 20A, V
GE
= 15V, T
J
= 150°C
V
GE(th)
Gate Threshold Voltage 3.0 — 6.0 V
V
CE
= V
GE
, I
C
= 600µA
∆V
GE(th)
/∆TJ
Threshold Voltage temp. coefficient — -16 — mV/°C
V
CE
= V
GE
, I
C
= 600
µ
A (25°C - 150°C)
gfe Forward Transconductance — 22 — S
V
CE
= 50V, I
C
= 20A, PW = 30µs
I
CES
Collector-to-Emitter Leakage Current — 2.0 100 µA
V
GE
= 0V, V
CE
= 1200V
— 2000 —
V
GE
= 0V, V
CE
= 1200V, T
J
= 150°C
V
FM
Diode Forward Voltage Drop — 2.8 3.6 V
I
F
= 20A
—2.5—
I
F
= 20A, T
J
= 150°C
I
GES
Gate-to-Emitter Leakage Current — — ±100 nA
V
GE
= ±30V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
Q
g
Total Gate Charge (turn-on) — 85 130
I
C
= 20A
Q
ge
Gate-to-Emitter Charge (turn-on) — 15 20 nC
V
GE
= 15V
Q
gc
Gate-to-Collector Charge (turn-on) — 35 50
V
CC
= 600V
E
on
Turn-On Switching Loss — 1060 1300
I
C
= 20A, V
CC
= 600V, V
GE
= 15V
E
off
Turn-Off Switching Loss — 620 850 µJ
R
G
= 10
Ω
, L = 200uH, L
S
= 150nH, T
J
= 25°C
E
total
Total Switching Loss — 1680 2150
Energy losses include tail & diode reverse recovery
t
d(on)
Turn-On delay time — 30 50
I
C
= 20A, V
CC
= 600V, V
GE
= 15V
t
r
Rise time — 15 30 ns
R
G
= 10Ω, L = 200uH, L
S
= 150nH, T
J
= 25°C
t
d(off)
Turn-Off delay time — 160 180
t
f
Fall time — 80 105
E
on
Turn-On Switching Loss — 1750 —
I
C
= 20A, V
CC
= 600V, V
GE
=15V
E
off
Turn-Off Switching Loss — 1120 — µJ
R
G
=10
Ω
, L=200uH, L
S
=150nH, T
J
= 150°C
E
total
Total Switching Loss — 2870 —
Energy losses include tail & diode reverse recovery
t
d(on)
Turn-On delay time — 30 —
I
C
= 20A, V
CC
= 600V, V
GE
= 15V
t
r
Rise time — 15 — ns
R
G
= 10Ω, L = 200uH, L
S
= 150nH
t
d(off)
Turn-Off delay time — 190 —
T
J
= 150°C
t
f
Fall time — 210 —
C
ies
Input Capacitance — 1940 — pF
V
GE
= 0V
C
oes
Output Capacitance — 120 —
V
CC
= 30V
C
res
Reverse Transfer Capacitance — 40 — f = 1.0Mhz
T
J
= 150°C, I
C
= 80A
RBSOA Reverse Bias Safe Operating Area FULL SQUARE
V
CC
= 960V, Vp =1200V
Rg = 10
Ω
, V
GE
= +20V to 0V
Erec Reverse Recovery Energy of the Diode — 790 — µJ
T
J
= 150°C
t
rr
Diode Reverse Recovery Time — 105 — ns
V
CC
= 600V, I
F
= 20A
I
rr
Peak Reverse Recovery Current — 40 — A
V
GE
= 15V, Rg = 10
Ω
, L =1.0mH, L
s
= 150nH
Conditions