Datasheet

ManualsBrandsINFINEON TECHNOLOGIES ManualsBJTs & IGBTsIGBT

INSULATED GATE BIPOLAR TRANSISTOR WITH

ULTRAFAST SOFT RECOVERY DIODE

IRG7PH35UDPbF

IRG7PH35UD-EP

1 www.irf.com

02/08/10

n-channel

Features

• Low V

CE (ON)

trench IGBT technology

• Low switching losses

• Square RBSOA

• 100% of the parts tested for I



• Positive V

CE (ON)

temperature co-efficient

• Ultra fast soft recovery co-pak diode

• Tight parameter distribution

• Lead-Free

Benefits

• High efficiency in a wide range of applications

• Suitable for a wide range of switching frequencies due to

low V

CE (ON)

and low switching losses

• Rugged transient performance for increased reliability

• Excellent current sharing in parallel operation

Applications

• U.P.S.

• Welding

• Solar Inverter

• Induction Heating

GC E

Gate Collector Emitter

TO-247AC

IRG7PH35UDPbF

TO-247AD

IRG7PH35UD-EP

CES

= 1200V

NOMINAL

= 20A

J(max)

= 150°C

CE(on)

typ. = 1.9V

Absolute Maximum Ratings

Parameter Max. Units

CES

Collector-to-Emitter Voltage 1200 V

@ T

= 25°C

Continuous Collector Current 50

@ T

= 100°C

Continuous Collector Current 25

NOMINAL

Nominal Current 20

Pulse Collector Current, V

=15V

Clamped Inductive Load Current, V

=20V

@ T

= 25°C

Diode Continous Forward Current 50

@ T

= 100°C

Diode Continous Forward Current 25

Diode Maximum Forward Current 80

Continuous Gate-to-Emitter Voltage ±30 V

@ T

= 25°C

Maximum Power Dissipation 180

@ T

= 100°C

Maximum Power Dissipation 70

Operating Junction and -55 to +150

STG

Storage Temperature Range

Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)

Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)

Thermal Resistance

Parameter Min. Typ. Max. Units

(IGBT) Thermal Resistance Junction-to-Case-(each IGBT) ––– ––– 0.70

(Diode) Thermal Resistance Junction-to-Case-(each Diode) ––– ––– 0.65

Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.24 –––

Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– 40 –––

°C/W

°C

PD-96288

Summary of content (11 pages)

PAGE 1
PD-96288 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Ultra fast soft recovery co-pak diode Tight parameter distribution Lead-Free IRG7PH35UDPbF IRG7PH35UD-EP C VCES = 1200V I NOMINAL = 20A G TJ(max) = 150°C E Benefits • High efficiency in a wide range of applications • Suitable for a wide range of switchin
PAGE 2
IRG7PH35UDPbF/IRG7PH35UD-EP Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Min. Typ. Max. Units V(BR)CES Collector-to-Emitter Breakdown Voltage Parameter 1200 — — V ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 1.2 — V/°C VCE(on) Collector-to-Emitter Saturation Voltage — 1.9 2.2 V — 2.3 — 3.0 — 6.0 VGE(th) Gate Threshold Voltage V Threshold Voltage temp.
PAGE 3
IRG7PH35UDPbF/IRG7PH35UD-EP 45 For both: Duty cycle : 50% Tj = 150°C Tc = 100°C Gate drive as specified Power Dissipation = 70W 40 35 Load Current ( A ) 30 Square Wave: VCC 25 20 I 15 10 Diode as specified 5 0 0.1 1 10 100 f , Frequency ( kHz ) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 60 200 50 150 Ptot (W) IC (A) 40 30 100 20 50 10 0 25 50 75 100 125 0 150 0 T C (°C) 20 40 60 80 100 120 140 160 T C (°C) Fig.
PAGE 4
IRG7PH35UDPbF/IRG7PH35UD-EP 80 80 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 60 ICE (A) 50 70 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 60 50 ICE (A) 70 40 40 30 30 20 20 10 10 0 0 0 2 4 6 8 0 10 2 4 Fig. 6- Typ. IGBT Output Characteristics TJ = -40°C; tp = 30µs 80 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 70 60 -40°C 25°C 150°C 70 60 50 IF (A) 50 ICE (A) 10 Fig. 7 - Typ.
PAGE 5
IRG7PH35UDPbF/IRG7PH35UD-EP 80 8 ICE = 10A ICE = 20A ICE = 40A VCE (V) 6 5 70 IC, Collector-to-Emitter Current (A) 7 4 3 2 60 50 40 TJ = 150°C 30 20 T J = 25°C 10 0 1 5 10 15 4 20 5 VGE (V) 7 8 9 10 Fig. 13 - Typ. Transfer Characteristics VCE = 50V, tp = 30µs Fig. 12 - Typical VCE vs.
PAGE 6
IRG7PH35UDPbF/IRG7PH35UD-EP 50 60 RG = 5.0Ω 45 40 RG = 10Ω 40 IRR (A) IRR (A) 50 RG = 47Ω 30 35 30 RG = 100Ω 20 25 20 10 10 15 20 25 30 35 0 40 20 40 IF (A) Fig. 18 - Typ. Diode IRR vs. IF TJ = 150°C 55 6000 50 5000 40A QRR (µC) IRR (A) 100 5.0Ω 4000 40 35 10Ω 47Ω 3000 20A 100Ω 2000 30 10A 1000 25 0 20 200 400 600 0 800 1000 1200 1400 1600 200 400 600 800 10001200140016001800 diF /dt (A/µs) diF /dt (A/µs) 2000 RG = 5.
PAGE 7
IRG7PH35UDPbF/IRG7PH35UD-EP 16 VGE, Gate-to-Emitter Voltage (V) 10000 Capacitance (pF) Cies 1000 100 Coes Cres 14 VCES = 600V VCES = 400V 12 10 8 6 4 2 0 10 0 100 200 300 400 500 0 600 20 40 60 80 100 Q G, Total Gate Charge (nC) VCE (V) Fig. 24 - Typical Gate Charge vs. VGE ICE = 20A; L = 2.4mH Fig. 23 - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz 1 Thermal Response ( Z thJC ) D = 0.50 0.20 0.1 0.10 0.05 0.02 τJ 0.01 0.
PAGE 8
IRG7PH35UDPbF/IRG7PH35UD-EP L L DUT 0 80 V + VCC - 1K DUT VCC Rg Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit diode clamp / DUT R= VCC ICM L -5V VCC DUT DUT / DRIVER VCC Rg Rg Fig.C.T.4 - Resistive Load Circuit Fig.C.T.3 - Switching Loss Circuit C force 100K D1 22K C sense G force DUT 0.0075µF E sense E force Fig.C.T.5 - BVCES Filter Circuit 8 www.irf.
PAGE 9
IRG7PH35UDPbF/IRG7PH35UD-EP 800 35 700 30 600 25 500 50 400 20 400 40 300 15 90% ICE VCE (V) 500 5% V CE 200 5% ICE 100 0 -100 -0.5 Eoff Loss 0 0.5 200 5 100 0 0 1.5 60 TEST CURRENT 90% test current 30 20 10% test current 5% V CE 10 0 Eon Loss -100 -0.3 2 70 tr 300 10 -5 1 80 ICE (A) 600 ICE (A) tf 700 VCE (V) 40 800 -0.1 0.1 0.3 -10 0.5 time (µs) time(µs) Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 150°C using Fig. CT.4 Fig. WF2 - Typ.
PAGE 10
IRG7PH35UDPbF/IRG7PH35UD-EP TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information (;$03/( 7+,6 ,6 $1 ,5)3( :,7+ $66(0%/< /27 &2'( $66(0%/(' 21 :: ,1 7+( $66(0%/< /,1( + 1RWH 3 LQ DVVHPEO\ OLQH SRVLWLRQ LQGLFDWHV /HDG )UHH ,17(51$7,21$/ 5(&7,),(5 /2*2 3$57 180%(5 ,5)3( + $66(0%/< /27 &2'( '$7( &2'( <($5 :((. /,1( + TO-247AC package is not recommended for Surface Mount Application.
PAGE 11
IRG7PH35UDPbF/IRG7PH35UD-EP TO-247AD Package Outline Dimensions are shown in millimeters (inches) TO-247AD Part Marking Information (;$03/( 7+,6 ,6 $1 ,5*3 % .' ( :,7+ $66(0%/< /27 &2'( $66(0%/(' 21 :: ,1 7+( $66(0%/< /,1( + 1RWH 3 LQ DVVHPEO\ OLQH SRVLWLRQ LQGLFDWHV /HDG )UHH 3$57 180%(5 ,17(51$7,21$/ 5(&7,),(5 /2*2 + $66(0%/< /27 &2'( '$7( &2'( <($5 :((. /,1( + TO-247AD package is not recommended for Surface Mount Application.