Datasheet

IRG7PH30K10PbF
www.irf.com 3
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
Fig. 2 - Power Dissipation vs. Case
Temperature
Fig. 3 - Forward SOA
T
C
= 25°C, T
J
≤ 175°C; V
GE
=15V
Fig. 4 - Reverse Bias SOA
T
J
= 175°C; V
GE
=20V
25 50 75 100 125 150 175
T
C
(°C)
0
5
10
15
20
25
30
35
I
C
(
A
)
0 25 50 75 100 125 150 175
T
C
(°C)
0
25
50
75
100
125
150
175
200
225
P
t
o
t
(
W
)
10 100 1000 10000
V
CE
(V)
1
10
100
I
C
(
A
)
1 10 100 1000 10000
V
CE
(V)
0.1
1
10
100
I
C
(
A
)
10µsec
100µsec
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
DC
Fig. 5 - Typ. IGBT Output Characteristics
T
J
= -40°C; tp = 80µs
Fig. 6 - Typ. IGBT Output Characteristics
T
J
= 25°C; tp = 80µs
0 2 4 6 8 10 12 14 16 18
V
CE
(V)
0
5
10
15
20
25
30
35
40
I
C
E
(
A
)
V
GE
= 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0 2 4 6 8 10 12 14 16 18
V
CE
(V)
0
5
10
15
20
25
30
35
40
I
C
E
(
A
)
V
GE
= 18V
V
GE
= 15V
V
GE
= 12V
V
GE
= 10V
V
GE
= 8.0V