Datasheet

INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH30K10PbF
1 www.irf.com
06/23/09
V
CES
= 1200V
I
C
= 23A, T
C
= 100°C
t
SC
≥ 10µs, T
J(max)
=175°C
V
CE(on)
typ. = 2.05V
Features
• Low V
CE (ON)
Trench IGBT Technology
• Low Switching Losses
• Maximum Junction Temperature 175 °C
• 10 µS short Circuit SOA
• Square RBSOA
• 100% of the parts tested for I
LM

• Positive V
CE (ON)
Temperature Co-Efficient
• Tight Parameter Distribution
• Lead Free Package
Benefits
• High Efficiency in a Wide Range of Applications
• Suitable for a Wide Range of Switching Frequencies due to
Low V
CE (ON)
and Low Switching Losses
• Rugged Transient Performance for Increased Reliability
• Excellent Current Sharing in Parallel Operation
GC E
Gate Collector Emitter
G
C
E
TO-247AC
C
E
C
G
n-channel
Absolute Maximum Ratings
Parameter Max. Units
V
CES
Collector-to-Emitter Voltage 1200 V
I
C
@ T
C
= 25°C
Continuous Collector Current 33
I
C
@ T
C
= 100°C
Continuous Collector Current 23
I
NOMINAL
Nominal Current 9.0
I
CM
Pulse Collector Current Vge = 15V 27
I
LM
Clamped Inductive Load Current Vge = 20V
36
V
GE
Continuous Gate-to-Emitter Voltage ±30
P
D
@ T
C
= 25°C
Maximum Power Dissipation 210
P
D
@ T
C
= 100°C
Maximum Power Dissipation 110
T
J
Operating Junction and -55 to +175
T
STG
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter Min. Typ. Max. Units
R
θ
JC
(IGBT)
Thermal Resistance Junction-to-Case-(each IGBT)
––– ––– 0.70
R
θ
CS
Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.24 –––
R
θ
JA
Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– 40 –––
A
W
°C/W
V
PD - 96156A