Datasheet

ManualsBrandsINFINEON TECHNOLOGIES ManualsBJTs & IGBTsIGBT N channel 12A

Parameter Max. Units

CES

Collector-to-Emitter Breakdown Voltage 600 V

@ T

= 25°C Continuous Collector Current 22

@ T

= 100°C Continuous Collector Current 12 A

Pulsed Collector Current  44

Clamped Inductive Load Current  44

Gate-to-Emitter Voltage ± 20 V

ARV

Reverse Voltage Avalanche Energy  5.0 mJ

@ T

= 25°C Maximum Power Dissipation 66

@ T

= 100°C Maximum Power Dissipation 26

Operating Junction and -55 to + 150

STG

Storage Temperature Range

Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case )

°C

Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)

IRG4RC20F

Fast Speed IGBT

INSULATED GATE BIPOLAR TRANSISTOR

Features

• Fast: Optimized for medium operating

frequencies (1-5 kHz in hard switching, >20

kHz in resonant mode).

• Generation 4 IGBT design provides tighter

parameter distribution and higher efficiency than

previous generation IGBTs.

• Industry standard TO-252AA package

• Combines very low V

CE(on)

with low switching

losses

• Generation 4 IGBTs offer highest efficiency

• Optimized for specific application conditions

• High power density and current rating

Benefits

CES

= 600V

CE(on) typ.

= 1.82V

= 15V, I

= 12A

Thermal Resistance

Absolute Maximum Ratings

2/22/01

D-Pak

TO-252AA

°C/W

Parameter Typ. Max. Units

θJC

Junction-to-Case ––– 1.9

θJA

Junction-to-Ambient (PCB mount)* ––– 50

Wt Weight 0.3 (0.01) ––– g (oz)

* When mounted on 1" square PCB (FR-4 or G-10 Material).

For recommended footprint and soldering techniques refer to application note #AN-994

N-channel

PD - 91731A

Summary of content (8 pages)

PAGE 1
PD - 91731A IRG4RC20F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: Optimized for medium operating frequencies (1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation IGBTs. • Industry standard TO-252AA package • Combines very low VCE(on) with low switching losses VCES = 600V VCE(on) typ. = 1.
PAGE 2
IRG4RC20F Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 600 — Emitter-to-Collector Breakdown Voltage 18 — ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.72 — 1.82 VCE(ON) Collector-to-Emitter Saturation Voltage — 2.42 — 2.04 VGE(th) Gate Threshold Voltage 3.0 — ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -11 gfe Forward Transconductance 5.2 7.
PAGE 3
IRG4RC20F 30 Load C urren t (A ) For both: Triangular wave: Duty cycle: 50% T J = 125°C T sink = 90°C Gate drive as specified Power Dissipation = 15W Clamp voltage: 80% of rated 20 Square wave: 60% of rated voltage 10 Ideal diodes A 0 0.1 1 10 100 f, F requency (kHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = I RMS of fundamental) TJ = 25°C TJ = 150°C 10 VGE = 15V 20µs PULSE WIDTH A I 1 1 2 V CE 3 4 , Collector-to-Em itter Voltage (V) Fig.
PAGE 4
IRG4RC20F 3.0 VCE , Collector-to-Emitter Voltage(V) Maximum DC Collector Current(A) 25 20 15 10 5 0 25 50 75 100 125 150 VGE = 15V 80 us PULSE WIDTH IC = 18 A 2.0 IC = 9A IC = 4.5 A 1.0 -60 -40 -20 TC , Case Temperature ( °C) 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( ° C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.10 P DM 0.
PAGE 5
IRG4RC20F 1000 600 VGE , Gate-to-Emitter Voltage (V) 800 C, Capacitance (pF) 20 VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc Cies 400 200 Coes VCC = 400V I C = 12A 15 10 5 Cres 0 1 10 0 100 0 VCE , Collector-to-Emitter Voltage (V) 10 Total Switching Losses (mJ) Total Switching Losses (mJ) V CC = 480V V GE = 15V TJ = 25 ° C 0.71 I C = 9.0A 0.70 0.68 0.67 0.66 20 30 40 RG , Gate Resistance (Ohm) (Ω) Fig. 9 - Typical Switching Losses vs.
PAGE 6
IRG4RC20F RG TJ VCC 4.0 VGE 100 = 50 50Ohm Ω = 150 ° C = 480V = 15V I C , Collector Current (A) Total Switching Losses (mJ) 5.0 3.0 2.0 VGE = 20V T J = 125 o C 10 1.0 1 0.0 5 10 15 20 25 SAFE OPERATING AREA 1 10 Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current L 1000 Fig. 12 - Turn-Off SOA D .U .T.
PAGE 7
IRG4RC20F 90 % 10 % VC 90 % Fig. 14b - Switching Loss t d (o ff) 1 0% IC 5% Waveforms tf tr t d (o n ) t=5µ s Eon E o ff E ts = (E o n +E o ff ) D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) 2 .3 8 (.09 4) 2 .1 9 (.08 6) 6.73 (.2 65) 6.35 (.2 50) -A1.2 7 (.050 ) 0.8 8 (.035 ) 5.46 (.2 15 ) 5.21 (.2 05 ) 1.14 (.0 45) 0.89 (.0 35) 0.5 8 (.02 3) 0.4 6 (.01 8) 4 6.45 (.2 45 ) 5.68 (.2 24 ) 6.2 2 (.245 ) 5.9 7 (.235 ) 1.02 (.0 40) 1.64 (.0 25) 1 2 1 0.
PAGE 8
IRG4RC20F D-Pak (TO-252AA) Tape & Reel Information TR TRR 1 6.3 ( .641 ) 1 5.7 ( .619 ) 12 .1 ( .4 76 ) 11 .9 ( .4 69 ) F E E D D IR E C T IO N TR L 16.3 ( .64 1 ) 15.7 ( .61 9 ) 8 .1 ( .3 18 ) 7 .9 ( .3 12 ) F E E D D IR E C T IO N NO T ES : 1. C O N T R O LL IN G D IM E N S IO N : M ILLIM E T E R . 2. A LL D IM E N S IO N S A R E S H O W N IN M ILL IM E T E R S ( IN C H E S ). 3. O U T L IN E C O N F O R M S T O E IA -4 81 & E IA -54 1. 13 IN C H 16 m m NOTES : 1.