Datasheet

IRG4PH50U
2 www.irf.com
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage 1200 —— VV
GE
= 0V, I
C
= 250µA
V
(BR)ECS
Emitter-to-Collector Breakdown Voltage T 18 —— VV
GE
= 0V, I
C
= 1.0A
V
(BR)CES
/T
J
Temperature Coeff. of Breakdown Voltage 1.20 V/°CV
GE
= 0V, I
C
= 1.0mA
2.56 3.5 I
C
= 20A
2.78 3.7 I
C
= 24A V
GE
= 15V
3.20 I
C
= 45A See Fig.2, 5
2.54 I
C
= 24A , T
J
= 150°C
V
GE(th)
Gate Threshold Voltage 3.0 6.0 V
CE
= V
GE
, I
C
= 250µA
V
GE(th)
/T
J
Temperature Coeff. of Threshold Voltage -13 mV/°CV
CE
= V
GE
, I
C
= 250µA
g
fe
Forward Transconductance U 23 35 SV
CE
= 100V, I
C
= 24A
——250 V
GE
= 0V, V
CE
= 1200V
I
CES
Zero Gate Voltage Collector Current ——2.0 µA V
GE
= 0V, V
CE
= 24V, T
J
= 25°C
——5000 V
GE
= 0V, V
CE
= 1200V, T
J
= 150°C
I
GES
Gate-to-Emitter Leakage Current ——±100 nA V
GE
= ±20V
Parameter Min. Typ. Max. Units Conditions
Q
g
Total Gate Charge (turn-on) 160 250 I
C
= 24A
Q
ge
Gate - Emitter Charge (turn-on) 27 40 nC V
CC
= 400V See Fig. 8
Q
gc
Gate - Collector Charge (turn-on) 53 83 V
GE
= 15V
t
d(on)
Turn-On Delay Time 35
t
r
Rise Time 15 T
J
= 25°C
t
d(off)
Turn-Off Delay Time 200 350 I
C
= 24A, V
CC
= 960V
t
f
Fall Time 290 500 V
GE
= 15V, R
G
= 5.0
E
on
Turn-On Switching Loss 0.53 Energy losses include "tail"
E
off
Turn-Off Switching Loss 1.41 mJ See Fig. 9, 10, 14
E
ts
Total Switching Loss 1.94 2.6
t
d(on)
Turn-On Delay Time 31 T
J
= 150°C
t
r
Rise Time 18 I
C
= 24A, V
CC
= 960V
t
d(off)
Turn-Off Delay Time 320 V
GE
= 15V, R
G
= 5.0
t
f
Fall Time 280 Energy losses include "tail"
E
ts
Total Switching Loss 5.40 See Fig. 11, 14
E
on
Turn-On Switching Loss 0.35 T
J
= 25°C, V
GE
= 15V, R
G
= 5.0
E
off
Turn-Off Switching Loss 1.43 I
C
= 20A, V
CC
= 960V
1.78 2.9 Energy losses include "tail"
4.56 See Fig. 9, 10, 11, 14, T
J
= 150°C
L
E
Internal Emitter Inductance 13 nH Measured 5mm from package
C
ies
Input Capacitance 3600 V
GE
= 0V
C
oes
Output Capacitance 160 pF V
CC
= 30V See Fig. 7
C
res
Reverse Transfer Capacitance 31 —ƒ = 1.0MHz
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
ns
mJ
S Repetitive rating; pulse width limited by maximum
junction temperature.
T Pulse width 80µs; duty factor 0.1%.
U Pulse width 5.0µs, single shot.
Notes:
Q Repetitive rating; V
GE
= 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
R V
CC
= 80%(V
CES
), V
GE
= 20V, L = 10µH, R
G
= 5.0,
(See fig. 13a)
V
CE(ON)
Collector-to-Emitter Saturation Voltage
mJ
ns
E
ts
Total Switching Loss