Datasheet
IRG4PH50U
2 www.irf.com
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage 1200 —— VV
GE
= 0V, I
C
= 250µA
V
(BR)ECS
Emitter-to-Collector Breakdown Voltage T 18 —— VV
GE
= 0V, I
C
= 1.0A
∆V
(BR)CES
/∆T
J
Temperature Coeff. of Breakdown Voltage — 1.20 — V/°CV
GE
= 0V, I
C
= 1.0mA
— 2.56 3.5 I
C
= 20A
— 2.78 3.7 I
C
= 24A V
GE
= 15V
— 3.20 — I
C
= 45A See Fig.2, 5
— 2.54 — I
C
= 24A , T
J
= 150°C
V
GE(th)
Gate Threshold Voltage 3.0 — 6.0 V
CE
= V
GE
, I
C
= 250µA
∆V
GE(th)
/∆T
J
Temperature Coeff. of Threshold Voltage — -13 — mV/°CV
CE
= V
GE
, I
C
= 250µA
g
fe
Forward Transconductance U 23 35 — SV
CE
= 100V, I
C
= 24A
——250 V
GE
= 0V, V
CE
= 1200V
I
CES
Zero Gate Voltage Collector Current ——2.0 µA V
GE
= 0V, V
CE
= 24V, T
J
= 25°C
——5000 V
GE
= 0V, V
CE
= 1200V, T
J
= 150°C
I
GES
Gate-to-Emitter Leakage Current ——±100 nA V
GE
= ±20V
Parameter Min. Typ. Max. Units Conditions
Q
g
Total Gate Charge (turn-on) — 160 250 I
C
= 24A
Q
ge
Gate - Emitter Charge (turn-on) — 27 40 nC V
CC
= 400V See Fig. 8
Q
gc
Gate - Collector Charge (turn-on) — 53 83 V
GE
= 15V
t
d(on)
Turn-On Delay Time — 35 —
t
r
Rise Time — 15 — T
J
= 25°C
t
d(off)
Turn-Off Delay Time — 200 350 I
C
= 24A, V
CC
= 960V
t
f
Fall Time — 290 500 V
GE
= 15V, R
G
= 5.0Ω
E
on
Turn-On Switching Loss — 0.53 — Energy losses include "tail"
E
off
Turn-Off Switching Loss — 1.41 — mJ See Fig. 9, 10, 14
E
ts
Total Switching Loss — 1.94 2.6
t
d(on)
Turn-On Delay Time — 31 — T
J
= 150°C
t
r
Rise Time — 18 — I
C
= 24A, V
CC
= 960V
t
d(off)
Turn-Off Delay Time — 320 — V
GE
= 15V, R
G
= 5.0Ω
t
f
Fall Time — 280 — Energy losses include "tail"
E
ts
Total Switching Loss — 5.40 — See Fig. 11, 14
E
on
Turn-On Switching Loss — 0.35 — T
J
= 25°C, V
GE
= 15V, R
G
= 5.0Ω
E
off
Turn-Off Switching Loss — 1.43 — I
C
= 20A, V
CC
= 960V
— 1.78 2.9 Energy losses include "tail"
— 4.56 — See Fig. 9, 10, 11, 14, T
J
= 150°C
L
E
Internal Emitter Inductance — 13 — nH Measured 5mm from package
C
ies
Input Capacitance — 3600 — V
GE
= 0V
C
oes
Output Capacitance — 160 — pF V
CC
= 30V See Fig. 7
C
res
Reverse Transfer Capacitance — 31 —ƒ = 1.0MHz
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
ns
mJ
S Repetitive rating; pulse width limited by maximum
junction temperature.
T Pulse width ≤ 80µs; duty factor ≤ 0.1%.
U Pulse width 5.0µs, single shot.
Notes:
Q Repetitive rating; V
GE
= 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
R V
CC
= 80%(V
CES
), V
GE
= 20V, L = 10µH, R
G
= 5.0Ω,
(See fig. 13a)
V
CE(ON)
Collector-to-Emitter Saturation Voltage
mJ
ns
E
ts
Total Switching Loss