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Parameter Max. Units

CES

Collector-to-Emitter Breakdown Voltage 1200 V

@ T

= 25°C Continuous Collector Current 45

@ T

= 100°C Continuous Collector Current 24 A

Pulsed Collector Current Q 180

Clamped Inductive Load Current R 180

Gate-to-Emitter Voltage ± 20 V

ARV

Reverse Voltage Avalanche Energy S 170 mJ

@ T

= 25°C Maximum Power Dissipation 200

@ T

= 100°C Maximum Power Dissipation 78

Operating Junction and -55 to + 150

STG

Storage Temperature Range

Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case )

°C

Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)

IRG4PH50U

Ultra Fast Speed IGBT

INSULATED GATE BIPOLAR TRANSISTOR

n-channel

TO-247AC

FeaturesFeatures

Features

Benefits

CES

= 1200V

CE(on) typ.

= 2.78V

= 15V, I

= 24A

Parameter Typ. Max. Units

θJC

Junction-to-Case ––– 0.64

θCS

Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W

θJA

Junction-to-Ambient, typical socket mount ––– 40

Wt Weight 6 (0.21) ––– g (oz)

Thermal Resistance

Absolute Maximum Ratings

• UltraFast: Optimized for high operating

frequencies up to 40 kHz in hard switching,

>200 kHz in resonant mode

• New IGBT design provides tighter

parameter distribution and higher efficiency than

previous generations

• Optimized for power conversion; SMPS, UPS

and welding

• Industry standard TO-247AC package

• Higher switching frequency capability than

competitive IGBTs

• Highest efficiency available

• Much lower conduction losses than MOSFETs

• More efficient than short circuit rated IGBTs

01/14/02

www.irf.com 1

PD - 91574B

Summary of content (9 pages)

PAGE 1
PD - 91574B IRG4PH50U Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than previous generations • Optimized for power conversion; SMPS, UPS and welding • Industry standard TO-247AC package VCES = 1200V VCE(on) typ. = 2.
PAGE 2
IRG4PH50U Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES V(BR)ECS ∆V(BR)CES/∆TJ VCE(ON) VGE(th) ∆VGE(th)/∆TJ gfe ICES IGES Parameter Min. Typ. Max. Units Conditions Collector-to-Emitter Breakdown Voltage 1200 — — V VGE = 0V, IC = 250µA Emitter-to-Collector Breakdown Voltage T 18 — — V VGE = 0V, IC = 1.0A Temperature Coeff. of Breakdown Voltage — 1.20 — V/°C VGE = 0V, IC = 1.0mA — 2.56 3.5 IC = 20A — 2.78 3.
PAGE 3
IRG4PH50U 60 F o r b o th : Tria ngula r w a ve : D uty c yc le: 5 0 % TJ = 1 25 °C T = 9 0°C s in k G ate driv e as s pe c ifie d I C lam p v olta ge : 8 0% of ra ted Load Current (A) P ow er D issipa tio n = 40W 40 S q u a re w a v e : 6 0% of rate d volta ge 20 I Id e a l d io d e s A 0 0.1 1 10 100 f, Frequency (kHz) Fig. 1 - Typical Load Current vs.
PAGE 4
IRG4PH50U 50 4.0 V = 15V 80 us PULSE WIDTH I C = 48 A VCE , Collector-to-Emitter Voltage(V) Maximum DC Collector Current(A) GE 40 30 20 10 0 25 50 75 100 125 150 3.5 I C = 24 A 3.0 I C = 12 A 2.5 2.0 -60 -40 -20 T C , Case Temperature ( ° C) 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( ° C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response (Z thJC ) 1 0.50 0.
PAGE 5
IRG4PH50U VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc C, Capacitance (pF) 6000 5000 Cies 4000 3000 2000 Coes 1000 C res 20 VGE , Gate-to-Emitter Voltage (V) 7000 0 1 10 VCC = 400V I C = 24A 16 12 8 4 0 100 0 VCE , Collector-to-Emitter Voltage (V) 40 80 120 160 200 QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 100 5.0 RG = 5.
PAGE 6
IRG4PH50U 1000 RG = 5.0Ω TJ = 150°C VGE = 15V VCC = 960V 15 I C , Collector-to-Emitter Current (A) Total Switching Losses (mJ) 20 VGE = 20V T J = 125 oC 100 10 5 SAFE OPERATING AREA 0 1 0 10 20 30 40 IC , Collector Current (A) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 6 10 50 1 10 100 1000 10000 VCE , Collector-to-Emitter Voltage (V) Fig. 12 - Turn-Off SOA www.irf.
PAGE 7
IRG4PH50U L D .U .T. VC * 50V RL = 0 - 960V 1 00 0V 960V 4 X IC@25°C 480µF 960V Q R * Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax ) * Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor w ill inc rea se to obta in ra ted Id. Fig. 13a - Clamped Inductive Fig. 13b - Pulsed Collector Load Test Circuit Current Test Circuit IC L D river* D .U .T. VC Fig. 14a - Switching Loss Test Circuit 50V 1000V Q * Driver same type as D.U.T.
PAGE 8
IRG4PH50U Case Outline and Dimensions — TO-247AC 3 .6 5 (.1 4 3 ) 3 .5 5 (.1 4 0 ) 0 .2 5 (.0 1 0 ) M D B M 1 5 .9 0 (.6 2 6 ) 1 5 .3 0 (.6 0 2 ) -B- -A5 .5 0 (.2 1 7) 2 0 .3 0 (.8 0 0 ) 1 9 .7 0 (.7 7 5 ) 2X 1 2 -D- 5 .3 0 ( .2 0 9 ) 4 .7 0 ( .1 8 5 ) 2 .5 0 (.0 8 9 ) 1 .5 0 (.0 5 9 ) 4 5 .5 0 (.2 17 ) 4 .5 0 (.1 77 ) LEAD 1234- 3 -C- * 1 4 .8 0 (.5 8 3 ) 1 4 .2 0 (.5 5 9 ) 2 .4 0 ( .0 9 4 ) 2 .0 0 ( .0 7 9 ) 2X 5 .4 5 (.2 1 5 ) 2X 4 .3 0 (.1 7 0 ) 3 .7 0 (.1 4 5 ) 3X 1 .4 0 (.0 5 6 ) 1 .
PAGE 9
Note: For the most current drawings please refer to the IR website at: http://www.irf.