Datasheet

Parameter Max. Units
V
CES
Collector-to-Emitter Breakdown Voltage 1200 V
I
C
@ T
C
= 25°C Continuous Collector Current 45
I
C
@ T
C
= 100°C Continuous Collector Current 24 A
I
CM
Pulsed Collector Current Q 180
I
LM
Clamped Inductive Load Current R 180
V
GE
Gate-to-Emitter Voltage ± 20 V
E
ARV
Reverse Voltage Avalanche Energy S 170 mJ
P
D
@ T
C
= 25°C Maximum Power Dissipation 200
P
D
@ T
C
= 100°C Maximum Power Dissipation 78
T
J
Operating Junction and -55 to + 150
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case )
°C
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)
IRG4PH50U
Ultra Fast Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
E
C
G
n-channel
TO-247AC
FeaturesFeatures
FeaturesFeatures
Features
Benefits
V
CES
= 1200V
V
CE(on) typ.
= 2.78V
@V
GE
= 15V, I
C
= 24A
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 0.64
R
θCS
Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W
R
θJA
Junction-to-Ambient, typical socket mount ––– 40
Wt Weight 6 (0.21) ––– g (oz)
Thermal Resistance
Absolute Maximum Ratings
W
UltraFast: Optimized for high operating
frequencies up to 40 kHz in hard switching,
>200 kHz in resonant mode
New IGBT design provides tighter
parameter distribution and higher efficiency than
previous generations
Optimized for power conversion; SMPS, UPS
and welding
Industry standard TO-247AC package
Higher switching frequency capability than
competitive IGBTs
Highest efficiency available
Much lower conduction losses than MOSFETs
More efficient than short circuit rated IGBTs
01/14/02
www.irf.com 1
PD - 91574B

Summary of content (9 pages)