Datasheet

IRG4PH50S
www.irf.com 5
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
15Ω
1 10 100
0
1000
2000
3000
4000
5000
6000
7000
V , Collector-to-Emitter Voltage (V)
C, Capacitance (pF)
CE

V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GE
ies
g
e
g
c , ce
res
g
c
oes ce
g
c

C
ies

C
oes

C
res
0 25 50 75 100 125 150 175
0
5
10
15
20
Q , Total Gate Charge (nC)
V , Gate-to-Emitter Voltage (V)
G
GE

V = 400V
I = 33A
CC
C
0 10 20 30 40 50
21.0
22.0
23.0
24.0
25.0
R , Gate Resistance (Ohm)
Total Switching Losses (mJ)
G

V = 960V
V = 15V
T = 25 C
I = 33A
CC
GE
J
C
°
-60 -40 -20 0 20 40 60 80 100 120 140 160
1
10
100
1000
T , Junction Temperature ( C )
Total Switching Losses (mJ)
J
°

R = 5Ohm
V = 15V
V = 960V
G
GE
CC

I = A
66
C

I = A
33
C

I = A
16.5
C
5Ω
R
G
, Gate Resistance ( Ω )